Growth mechanism of In–doped β–Ga 2 O 3 nanowires deposited by radio frequency powder sputtering

Abstract We investigate the growth mechanism of In-doped β–Ga2O3 nanowires (NWs) deposited using radio frequency powder sputtering. Although the growth sequence of the doped NWs is similar to that of the undoped β–Ga2O3 NWs, the formation of self-assembled In clusters is more favorable compared to Ga clusters. Clusters of In act as seeds for initiating the growth of In-doped β–Ga2O3 NWs through a self-catalytic vapor-liquid-solid mechanism, while Ga seeds initiate the growth of undoped β–Ga2O3 NWs by the same mechanism. We also observed zigzag NWs formed by alternating NW growth directions.