The effect of stress on the piezoelectric properties of BNT–BT–ST thin films

Abstract The Bi 0.5 Na 0.5 TiO 3 –BaTiO 3 –SrTiO 3 (BNT–BT–ST) thin films were grown on the LaNiO 3 buffered MgO, SrTiO 3 and LaAlO 3 single crystal substrates, respectively. A systematic stress change of the thin films was obtained. The effect of increasing tensile stress on phase transition temperature is attributed to the suppression of in-plane polarization. The tensile stress reduces the unit cell along electric field, remnant polarization and dielectric permittivity, while enhances the piezoelectric response in this study. The high strain level (0.25%) and piezoelectric coefficient ( d 33 * =200 pm/V) were obtained. These results suggest that the piezoelectric properties of BNT–BT–ST thin films can be adjusted by choosing different stress magnitude.