The role of the fluorine concentration and substrate temperature on the electrical, optical, morphological and structural properties of chemically sprayed ZnO:F thin films
Source abstract
Abstract
Abstract The effect of both the fluorine/zinc ratio, [F]/[Zn], in the starting solution and the substrate temperature (TS) on the transport, structural and optical properties of chemically sprayed fluorine-doped zinc oxide (ZnO:F) thin films is reported. An important decrease in the resistivity (on the order of 1.2×10−2 Ωcm) is observed in films deposited at 500 °C, from a starting solution with a [F]/[Zn] ratio as low as 10 at.%. In order to obtain such decrease, an adequate combination of, an excess in acetic acid, the addition of hydrofluoric acid and an aging process of 9 days of the solution were required. A minimum resistivity was obtained in films deposited with a [F]/[Zn] of 20 at.%, beyond this value the films obtained show higher resistivity values. As the [F]/[Zn] ratio in the solution increases, the grain size decreases, as observed by scanning electron microscopy. A (002) preferential growth is observed in films deposited with [F]/[Zn] ratios in solution lower than 20 at.%, whereas a switching from (002) to (101) is observed in the films deposited with the highest [F]/[Zn] ratio. A typical transmittance higher than 85% and a band gap (Eg) of 3.3 eV were obtained in the films deposited at the optimum conditions.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: ZnO doping and properties · Ga2O3 and related materials · Copper-based nanomaterials and applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (15)
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1. Ortíz · J. Non-Cryst. Solids · 1988 · 103 · 910.1016/0022-3093(88)90409-7 ↗
2. Martinez · Sol. Energy Mater. Sol. Cells · 1997 · 45 · 7510.1016/S0927-0248(96)00066-9 ↗
3. Keshmiri · Thin Solid Films · 2001 · 382 · 23010.1016/S0040-6090(00)01776-4 ↗
4. Assunçâo · Thin Solid Films · 2003 · 427 · 40110.1016/S0040-6090(02)01184-7 ↗
5. Deng · Sci. China, Ser. E: Technol. Sci. · 2003 · 46 · 35510.1360/02ye0313 ↗
6. Fathollani · Mater. Lett. · 2001 · 5O · 23510.1016/S0167-577X(01)00231-2 ↗
7. Ayouchi · Thin Solid Films · 2003 · 426 · 6810.1016/S0040-6090(02)01331-7 ↗
8. Patil · Mater. Chem. Phys. · 1999 · 59 · 18510.1016/S0254-0584(99)00049-8 ↗
9. Nunes · Vacuum · 2002 · 64 · 28110.1016/S0042-207X(01)00322-0 ↗
10. Paraguay · Thin Solid Films · 1999 · 350 · 19210.1016/S0040-6090(99)00050-4 ↗
11. Morris · Appl. Surf. Sci. · 1996 · 92 · 16710.1016/0169-4332(95)00224-3 ↗
12. Mirzapour · J. Mater. Sci. · 1994 · 29 · 70010.1007/BF00445982 ↗
13. Sánchez-Juárez · Sol. Energy Mater. Sol. Cells · 1998 · 52 · 30110.1016/S0927-0248(97)00246-8 ↗
14. Goyal · J. Mater. Sci. · 1992 · 29 · 470510.1007/BF01166010 ↗
15. Smith · Thin Solid Films · 1999 · 345 · 19210.1016/S0040-6090(99)00167-4 ↗