Epitaxial growth of MgFe2O4 (111) thin films on sapphire (0001) substrate

Abstract Pulsed laser deposition technique is used to fabricate thin films of MgFe 2 O 4 on sapphire substrate. X-ray diffraction patterns show that films are epitaxial along (lll) direction on c -axis oriented sapphire. The observation of six fold symmetry in phi scan for the film suggests the presence of twinned in-plane alignments. The presence of magnetic hysteresis loop at room temperature indicates the ferromagnetic behavior of the film. The coercive field of 742 Oe and remnant magnetization of 151 emu/cm 2 is observed at room temperature. The coercive field and remnant magnetization decrease with increase in temperature.