journal article·2002-11

Reaction intermediate(s) in the conversion of β-gallium oxide to gallium nitride under a flow of ammonia

Woo-Sik Jung

Materials Letters· Volume 57· Issue 1
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Abstract

Abstract The process of conversion of β-gallium oxide (β-Ga 2 O 3 ) to gallium nitride (GaN) under a flow of ammonia was monitored by XRD, IR, and 71 Ga magic-angle spinning (MAS) NMR spectroscopy. It is most likely that the conversion of β-Ga 2 O 3 to GaN does not proceed through Ga 2 O but stepwise via amorphous gallium oxynitrides (GaO x N y ) as intermediates.
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Research context

OpenAlex topics: GaN-based semiconductor devices and materials · Ga2O3 and related materials · ZnO doping and properties

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