Studies on the electrical properties of Cu2NiSnS4 thin films prepared by a simple chemical method
Source abstract
Abstract
Abstract In this paper, the Cu2NiSnS4 (CNTS) thin films were synthesized by a simple chemical method using Spray Sandwich technique without any annealing treatment. The prepared CNTS thin films were studied by X-ray diffraction (XRD) and impedance spectroscopy. The result obtained from the XRD measurements showed that CNTS thin films are polycrystalline in nature with cubic structure and preferred orientation along (1 1 1) plane. Electrical study of CNTS thin films is investigated by impedance spectroscopy for the first time. The activation energies Ea obtained from both angular frequency and DC conductivity are found to be 1.18 and 1.1 eV, respectively.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Chalcogenide Semiconductor Thin Films · Quantum Dots Synthesis And Properties · Copper-based nanomaterials and applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (15)
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