Investigation of the sulfurization process of Cu2SnS3 thin films with stacked layers CBD-Cu/SnS by rapid thermal process

Abstract Cu 2 SnS 3 is one kind of new promising material for low-cost thin film solar cells. In this letter, Cu 2 SnS 3 film has been fabricated through sulfurization of Cu/SnS precursors stacked layers by Chemical bath deposition(CBD) with rapid thermal system. To study the growth mechanism of CTS, the phase structural and micro-structural properties of the films with different annealing temperature were taken out carefully. In brief, binary sulfide Cu 2−x S forms at low temperature and decomposes to Cu 8 S 5 with the increase of annealing temperature showed by XRD analysis. Gradually, top binary sulfide layer disappears with the generation of Cu 2 SnS 3 , which is consistent with the result of SEM that the boundary line disappears with the temperature rising. Moreover, Raman analysis confirms that tetragonal Cu 2 SnS 3 begins transforming to monoclinic Cu 2 SnS 3 at 430 °C and monoclinic Cu 2 SnS 3 is obtained at 500 °C.