Thermal evaporation growth of topological insulator Bi2Se3 thin films

Abstract Topological insulator Bi2Se3 thin films were grown by thermal evaporation deposition with post-annealing treatment and their phase structures and electrical properties were studied. With increasing annealing temperature, the resistivity decreased, which could be ascribed to higher carrier concentration caused by Se vacancies. Resistivity upturn as well as weak anti-localization was observed only in the film annealed at 300 °C.