Electron beam induced crystallization of sputter deposited amorphous alumina thin films
Source abstract
Abstract
Abstract Crystallization of amorphous alumina (Al2O3) in a thin film capacitor structure was induced by the electron beam of a transmission electron microscope (TEM). The crystallization was initially observed while collecting selected area diffraction (SAD) patterns after 2 min of beam exposure at an accelerating voltage of 200 keV and a beam current density of 13.0 A/cm2. After 16 min of beam exposure, distinct ring patterns associated with crystal growth were evident in the SAD pattern. Bright field and dark field TEM images confirmed that crystallization occurred, with crystals growing up to ~50 nm in diameter.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Glass properties and applications · Semiconductor materials and devices · Ion-surface interactions and analysis
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References (17)
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