Synthesis and photoluminescence properties of red-emitting phosphors Ba2Gd8(SiO4)6O2:Eu3+

Abstract Red-emitting phosphors Ba 2 Gd 8 (SiO 4 ) 6 O 2 :Eu 3+ (BGS:Eu 3+ ) with silicate apatite structure were prepared by the conventional high temperature solid state reaction method. Rietveld structural refinement based on X-ray diffraction data indicated that there are two different sites for Eu 3+ occupying in the host. It was found that the phosphors BGS:Eu 3+ exhibit red emission with high quenching concentration at ~70.75 at%, then the critical transfer distance of Eu 3+ in BGS:Eu 3+ was calculated to be ~12.3 A. More importantly, it has better CIE chromaticity coordinate for white light-emitting diode (w-LED) application in comparison with the commercial phosphor (Y,Gd)BO 3 :Eu 3+ (YGB:Eu 3+ ) under near ultraviolet (n-UV) 393 nm excitation.