Fabrication of p-type kesterite Ag2ZnSnS4 thin films with a high hole mobility
Source abstract
Abstract
•P-type Ag2ZnSnS4 thin film was first successfully prepared by magnetron sputtering technique and sulfurization.•The high carrier mobility 219.24cm2v−1s−1 was successfully obtained.•The efficiency of the AZTS for the solar cell was 1.38%.
The source flagged this abstract for review. Check formulas and completeness against the original publication.
Source: openaire · Quality: needs review · Source record ↗
Source flags: short_text
Source flags: short_text
Research context
OpenAlex topics: Chalcogenide Semiconductor Thin Films · Quantum Dots Synthesis And Properties · Copper-based nanomaterials and applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (11)
Show source-provided references
1. Green · Prog. Photovolt. · 2015 · 23 · 110.1002/pip.2573 ↗
2. Chen · Adv. Mater. · 2013 · 25 · 152210.1002/adma.201203146 ↗
3. Chen · Appl. Phys. Lett. · 2010 · 96 · 02190210.1063/1.3275796 ↗
4. Nakayama · Appl. Surf. Sci. · 1996 · 92 · 17110.1016/0169-4332(95)00225-1 ↗
5. Scragg · Phys. Status Solidi B · 2008 · 245 · 177210.1002/pssb.200879539 ↗
6. Ramasamy · Chem. Commun. · 2012 · 48 · 570310.1039/c2cc30792h ↗
7. Suryawanshi · Mater. Sci. Technol. · 2013 · 28 · 9810.1179/1753555712Y.0000000038 ↗
8. Moholkar · J. Alloy. Compd. · 2012 · 544 · 14510.1016/j.jallcom.2012.07.108 ↗
9. Yeh · Thin Solid Films · 2014 · 558 · 28910.1016/j.tsf.2014.02.046 ↗
10. Sasamura · Chem. Lett. · 2012 · 41 · 100910.1246/cl.2012.1009 ↗
11. Yuan · Adv. Funct. Mater. · 2015 · 25 · 673310.1002/adfm.201502272 ↗