Nanoscale structural damage due to focused ion beam milling of silicon with Ga ions
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Abstract
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Research context
OpenAlex topics: Advanced Surface Polishing Techniques · Integrated Circuits and Semiconductor Failure Analysis · Ion-surface interactions and analysis
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References (12)
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2. The effect of eigenstrain induced by ion beam damage on the apparent strain relief in FIB-DIC residual stress evaluation10.1016/j.matdes.2015.12.015 ↗
3. F. Hofmann, E. Tarleton, R.J. Harder, N.W. Phillips, P.W. Ma, J.N. Clark et al., 3D lattice distortions and defect structures in ion-implanted nano-crystals, Scientific Reports 7 (2017).10.1038/srep45993 ↗
4. Quantifying eigenstrain distributions induced by focused ion beam damage in silicon10.1016/j.matlet.2016.08.111 ↗
5. Eigenstrain analysis of residual strains and stresses10.1243/03093247JSA423 ↗
6. Measurements of carbon thin films using x-ray reflectivity10.1063/1.344361 ↗
7. Characterization of amorphous and nanocrystalline carbon films10.1016/j.matchemphys.2005.07.048 ↗
8. Manipulation of polymer/polymer interface width from nonequilibrium deposition10.1021/am3022587 ↗
9. Diffusion of Ag into organic semiconducting materials: a combined analytical study using transmission electron microscopy and X-ray reflectivity10.1021/am301504j ↗
10. GenX: an extensible X-ray reflectivity refinement program utilizing differential evolution10.1107/S0021889807045086 ↗
11. Mitigating curtaining artifacts during Ga FIB TEM lamella preparation of a 14 nm FinFET device
12. Thermal treatment-induced ductile-to-brittle transition of submicron-sized Si pillars fabricated by focused ion beam10.1063/1.4913241 ↗