ZnO thin films with DC and RF reactive sputtering

ZnO thin films were deposited onto glass substrates with direct current or radio frequency reactive magnetron sputtering process from a Zn target. All films demonstrated strong (002) preferential orientation. It was also observed that the type of plasma excitation, oxygen partial pressure, bias, working distance and doping could significantly change the microstructure, crystallinity and deposition rate of the films. The mechanisms governing these changes were briefly discussed.