Nanoimaging of Electrical Failure in VO2 Resistive-Switching Nanodevices
Source abstract
Abstract
Pushing the limits of electronics to higher performance has always been constrained by fatigue and failure of the constituting devices. For high-speed resistive-switching components, this problem is particularly important. Here, we used complementary nanoimaging techniques to explore electrical damage in a resistive-switching material VO2. The revealed mechanisms of electrical damage include surface melting, coalescence of material into droplets, and ablation. This three-stage scenario is likely to be found in other correlated oxides and more broadly in the general class of resistive-switching systems. We suggest strategies for preventing the electrical failure of devices in resistive-switching technology.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advanced Memory and Neural Computing · Transition Metal Oxide Nanomaterials · Gas Sensing Nanomaterials and Sensors
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Physics, University of California San Diego, La Jolla, California 92093, United States
Leibniz Institute for Solid State and Materials Research, IFW, 01069 Dresden, Germany
Center for Nanoscale Materials, Argonne National Laboratory, Argonne, Illinois 60439, United States
Department of Physics, Columbia University, New York, New York 10027-6902, United States
Funding
Air Force Office of Scientific Research · Deutsche Forschungsgemeinschaft · Office of Naval Research · Alexander von Humboldt-Stiftung
References (19)
Show source-provided references
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