journal article·2025

Precise weight tuning in quantum dot-based resistive-switching memory for neuromorphic systems

Gyeongpyo Kim, Doheon Yoo, Hyojin So, Seoyoung Park, Sungjoon Kim, Min-Jae Choi, Sungjun Kim

Materials Horizons· Volume 12· Issue 3
Publisher page

Abstract

/ITO device exhibits reversible switching performances with excellent data retention. Fast switching speeds in the order of nanoseconds were confirmed, which could be explained by trapping/detrapping and quantum tunneling effects by the trap provided by nanoscale InGaP QDs. In addition, the operating voltage is decreased when the device is exposed to ultraviolet light for low-power switching. Biological synapse features such as spike-timing-dependent plasticity are emulated for neuromorphic systems. Finally, the incremental step pulse using proven algorithm method enabled the implementation of four-bit states (16 states), markedly enhancing the inference precision of neuromorphic systems.
Source: openalex_inverted_index · Quality: candidate unverified · Source record ↗

Research context

OpenAlex topics: Advanced Memory and Neural Computing · Electronic and Structural Properties of Oxides · Neuroscience and Neural Engineering

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, South Korea

Department of Chemical & Biochemical Engineering, Dongguk University, Seoul 04620, Republic of Korea

Department of AI Semiconductor Engineering, Korea University, Sejong 30019, Republic of Korea

Funding

National Research Foundation of Korea

References (65)

Show source-provided references
1. Wang · Nat. Rev. Mater. · 2020 · 5 · 17310.1038/s41578-019-0159-3 ↗
2. Guan · Adv. Funct. Mater. · 2018 · 28 · 170466510.1002/adfm.201704665 ↗
3. Wang · Curr. Appl. Phys. · 2020 · 20 · 37110.1016/j.cap.2019.12.008 ↗
4. Lim · J. Phys. D: Appl. Phys. · 2024 · 57 · 47300110.1088/1361-6463/ad7036 ↗
5. Kim · Adv. Mater. · 2023 · 35 · 220686410.1002/adma.202206864 ↗
6. Miura · IEEE Trans. Electron Devices · 2020 · 67 · 536810.1109/TED.2020.3025749 ↗
7. Kim · Small · 2023 · 19 · 230365910.1002/smll.202303659 ↗
8. Yan · Adv. Intell. Syst. · 2019 · 1 · 190006810.1002/aisy.201900068 ↗
9. Ismail · Nano Convergence · 2023 · 10 · 3310.1186/s40580-023-00380-8 ↗
10. Kim · Adv. Funct. Mater. · 2024 · 34 · 231019310.1002/adfm.202310193 ↗
11. Sun · IEEE Trans. Cybern. · 2020 · 50 · 2935
12. Kim · ACS Nano · 2024 · 18 · 2512810.1021/acsnano.4c06942 ↗
13. Lee · ACS Nano · 2024 · 18 · 1432710.1021/acsnano.4c00333 ↗
14. Chakraborty · Phys. Rev. Appl. · 2019 · 11 · 01406310.1103/PhysRevApplied.11.014063 ↗
15. Ji · Org. Electron. · 2015 · 18 · 7710.1016/j.orgel.2015.01.010 ↗
16. Wang · Appl. Phys. Lett. · 2010 · 97 · 262112310.1063/1.3533021 ↗
17. Tang · Adv. Mater. · 2010 · 22 · 139810.1002/adma.200903240 ↗
18. Dai · Nature · 2014 · 515 · 9610.1038/nature13829 ↗
19. Kagan · Nat. Nanotechnol. · 2015 · 10 · 101310.1038/nnano.2015.247 ↗
20. Li · Adv. Funct. Mater. · 2015 · 25 · 492910.1002/adfm.201501250 ↗
21. Hetsch · Mater. Today · 2013 · 16 · 31210.1016/j.mattod.2013.08.011 ↗
22. Kannan · Appl. Phys. Lett. · 2011 · 99 · 14350410.1063/1.3647629 ↗
23. Ma · Org. Electron. · 2016 · 28 · 2010.1016/j.orgel.2015.10.002 ↗
24. Yan · J. Mater. Chem. C · 2017 · 5 · 1104610.1039/C7TC03037A ↗
25. Dai · Nature · 2014 · 515 · 9610.1038/nature13829 ↗
26. Portney · ACS Nano · 2008 · 2 · 19110.1021/nn700240z ↗
27. Geller · Appl. Phys. Lett. · 2008 · 92 · 09210810.1063/1.2890731 ↗
28. Kannan · J. Appl. Phys. · 2021 · 16 · 178
29. Lv · Adv. Sci. · 2018 · 5 · 180071410.1002/advs.201800714 ↗
30. Zhong · Nanoscale Res. Lett. · 2021 · 16 · 1710.1186/s11671-021-03636-6 ↗
31. Sharma · Adv. Mater. Interfaces · 2022 · 10 · 220153710.1002/admi.202201537 ↗
32. Zhu · ACS Nano · 2018 · 12 · 124210.1021/acsnano.7b07317 ↗
33. Karbalaei Akbari · Nat. Commun. · 2019 · 10 · 387310.1038/s41467-019-11823-4 ↗
34. Kumar · ACS Appl. Mater. Interfaces · 2018 · 10 · 3437010.1021/acsami.8b10870 ↗
35. Zhou · Nat. Nanotechnol. · 2019 · 14 · 77610.1038/s41565-019-0501-3 ↗
36. Xu · NPG Asia Mater. · 2019 · 11 · 1810.1038/s41427-019-0118-x ↗
37. Kannan · J. Appl. Phys. · 2011 · 110 · 07450510.1063/1.3644973 ↗
38. Kim · Front. Neurosci. · 2024 · 18 · 127970810.3389/fnins.2024.1279708 ↗
39. Kheradpisheh · Neural Networks · 2018 · 99 · 5610.1016/j.neunet.2017.12.005 ↗
40. Caporale · Annu. Rev. Neurosci. · 2008 · 31 · 2510.1146/annurev.neuro.31.060407.125639 ↗
41. Dan · Neuron · 2004 · 44 · 2310.1016/j.neuron.2004.09.007 ↗
42. Li · Chin. Sci. Bull. · 2011 · 56 · 307210.1007/s11434-011-4671-0 ↗
43. Lim · Electronics · 2015 · 4 · 58610.3390/electronics4030586 ↗
44. Lee · IEEE Trans. Electron Devices · 2021 · 68 · 43810.1109/TED.2020.3037267 ↗
45. Das · Semicond. Sci. Technol. · 2019 · 34 · 12501610.1088/1361-6641/ab5175 ↗
46. Ma · Org. Electron. · 2016 · 28 · 2010.1016/j.orgel.2015.10.002 ↗
47. Ungureanu · Adv. Mater. · 2012 · 24 · 249610.1002/adma.201200382 ↗
48. Wang · Adv. Mater. · 2018 · 30 · 180032710.1002/adma.201800327 ↗
49. Ali · Org. Electron. · 2015 · 25 · 22510.1016/j.orgel.2015.06.040 ↗
50. Gogoi · J. Appl. Phys. · 2019 · 126 · 02550110.1063/1.5102145 ↗
51. Ryu · Org. Electron. · 2024 · 126 · 10699710.1016/j.orgel.2024.106997 ↗
52. Li · Phys. Rev. Appl. · 2022 · 17 · 03400710.1103/PhysRevApplied.17.034007 ↗
53. Wang · IEEE Trans. Electron Devices · 2023 · 70 · 606410.1109/TED.2023.3318519 ↗
54. Guo · ACS Appl. Electron. Mater. · 2020 · 2 · 82710.1021/acsaelm.0c00006 ↗
55. Thomas · Sci. Rep. · 2020 · 10 · 1245010.1038/s41598-020-68822-5 ↗
56. Bera · ACS Appl. Electron. Mater. · 2022 · 5 · 8502
57. Yin · Nano Lett. · 2020 · 20 · 414410.1021/acs.nanolett.0c00002 ↗
58. Kim · Semicond. Sci. Technol. · 2019 · 34 · 06500610.1088/1361-6641/ab1403 ↗
59. Rehman · J. Phys. D: Appl. Phys. · 2017 · 50 · 33510410.1088/1361-6463/aa798a ↗
60. Wang · IEEE Trans. Electron Devices · 2020 · 67 · 488410.1109/TED.2020.3022005 ↗
61. Ziegler · J. Appl. Phys. · 2018 · 124 · 15200310.1063/1.5042040 ↗
62. Ryu · J. Alloys Compd. · 2021 · 850 · 15667510.1016/j.jallcom.2020.156675 ↗
63. Kim · IEEE Electron Device Lett. · 2018 · 39 · 63010.1109/LED.2018.2809661 ↗
64. Guan · IEEE Trans. Electron Devices · 2012 · 59 · 117210.1109/TED.2012.2184545 ↗
65. Kim · Adv. Intell. Syst. · 2024 · 6 · 230079710.1002/aisy.202300797 ↗