Equipment-friendly encapsulation structure of SiO2/Cu for efficient infrared shield

SiO2/Cu equipment-friendly infrared interfering agent was built from tetraethoxysilane and flake copper powder through in-situ synthesis reaction. SEM images indicated the encapsulation structure of the samples. FT-IR, XPS and XRD spectra revealed the presence of SiO2 that was coated into the surface and edge of Cu. The shielding performance and the electrical property could be controlled by adjusting the content of SiO2. The infrared transmittance of SiO2/Cu was 23.29% at 1 ∼ 3 μm, 22.92% at 3 ∼ 5 μm and 21.70% at 8 ∼ 14 μm. The mass extinction coefficient was 1.47 m2·g−1 at 1 ∼ 3 μm, 1.48 m2·g−1 at 3 ∼ 5 μm and 1.54 m2·g−1 at 8 ∼ 14 μm, and the resistivity was 1.20 × 1010 Ω·cm at 10 MPa. There was no significant difference found between the shielding performance of Cu and SiO2/Cu. Deposition of SiO2 in this structure supplies high resistivity and excellent shielding performance, and provides highly efficient infrared interfering agent without damaging the basic structure of Cu. This work demonstrates that in-situ synthesis method is a facile and efficient strategy to obtaining optimal shielding performance of SiO2/Cu equipment-friendly infrared interfering agent and met the expectations and synthesis methods from our original material design.