Monolithic RGB Micro-Light-Emitting Diodes Fabricated with Quantum Dots Embedded inside Nanoporous GaN
Source abstract
Abstract
We report the use of colloidal quantum dots (QDs) embedded in nanoporous (NP) gallium nitride (GaN) as a color converter to achieve different emission colors and fabricate micro-light-emitting diodes (micro-LEDs). The optical property of NP-GaN has been studied by analyzing the light transmittance propagating in NP-GaN. A strong light scattering effect can be induced by NP-GaN, resulting in a dramatically increased optical transmission path for blue light and high light absorption by QDs loaded inside NP-GaN. A 4 in. color converter has been achieved with a wavelength deviation of 1 nm across the entire wafer. Monolithic red, green, and blue micro-LEDs have been fabricated with a pixel size of around 35 × 35 μm2.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Nanowire Synthesis and Applications · Quantum Dots Synthesis And Properties
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
State Key Laboratory of Transient Optics and Photonics, Xi’an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences, Xi’an 710119, China
Department of Electrical Engineering, Yale University, New Haven, Connecticut 06520, United States
Funding
Xi'an SaiFuLeSi Semiconductor Technology Co., Ltd
References (31)
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