journal article·2023-03-14

Ga2O3 Quantum Dots with N-Doped Amorphous Carbon Fixed for Efficient Storage and Transfer of Lithium Ions by Introduction of Dopamine Hydrochloride

Yuyang Wang, Zhisong Xiong, Ying Zhao, Zhiqiang Zhang, Guanyu Qiu, Zhifu Liang, Chen Mei, Shuang Hou, Shuti Li, Fangliang Gao, Lingzhi Zhao

Langmuir· Volume 39· Issue 10
Publisher page

Abstract

The Ga 2 O 3 anode has great potential due to its self-healing and high theoretical capacity in lithium-ion batteries. Like anodes with other transition metal oxides, the Ga 2 O 3 anode has the problems of structural change and low electrical conductivity. The electrochemical performance of the Ga 2 O 3 anode still needs to be improved. In this work, we synthesized a Ga 2 O 3 quantum dots@N-doped carbon (Ga 2 O 3 -QD@NC) composite by hydrothermal reaction with a carbon source of dopamine hydrochloride, in which Ga 2 O 3 quantum dots were dispersed in the interior of the amorphous carbon. Such a special structure is conducive to the high-speed migration of lithium ions and electrons and effectively inhibits volume expansion and agglomeration. Smaller and more uniform quantum dots facilitate efficient repair of the structure. Due to these advantages, the Ga 2 O 3 -QD@NC electrode has great electrochemical performance. The Ga 2 O 3 -QD@NC electrode has an initial discharge capacity of 1580 mAh g –1 with a high first Coulombic efficiency of 62.8% and a cycling capacity of 953 mAh g –1 under 0.1 A g –1 . It even has a capacity of 460 mAh g –1 at 1 A g –1 after 300 cycles. This strategy can provide a new direction for the Ga 2 O 3 anode in lithium-ion batteries with high capacity.
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Research context

OpenAlex topics: Advancements in Battery Materials · Semiconductor materials and devices · Supercapacitor Materials and Fabrication

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

GuangDong Engineering Technology Research Center of Low Carbon and Advanced Energy Materials, Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, South China Normal University, Foshan 528225, China

Tianjin University of Traditional Chinese Medicine, Tianjin 301617, China

SCNU Qingyuan Institute of Science and Technology Innovation Company, Ltd., Qingyuan 511517, China

Funding

National Natural Science Foundation of China · Scientific and Technological Plan of Guangdong Province and Qingyuan City · Guangdong Basic and Applied Basic Research Foundation

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