Complementary Resistive Switching Behavior in Tetraindolyl Derivative-Based Memory Devices
Source abstract
Abstract
Complementary resistive switching (CRS) devices are more advantageous compared to bipolar resistive switching (BRS) devices for memory applications as they can minimize the sneak path problem observed in the case of BRS having a crossbar array structure. Here, we report the CRS behavior of 1,4-bis(di(1H-indol-3-yl)methyl)benzene (Indole1) molecules. Our earlier study revealed that Au/Indole1/Indium tin oxide (ITO) devices showed BRS under ambient conditions. However, the present investigations revealed that when the device is exposed to 353 K or higher temperatures, dynamic evolution of the Au/Indole1/ITO device from BRS to CRS occurred with a very good memory window (∼103), data retention (5.1 × 103 s), stability (50 days), and device yield (∼ 60%). This work explores the application possibility of indole derivatives toward future ultradense resistive random access memory.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advanced Memory and Neural Computing · Photoreceptor and optogenetics research · Luminescence and Fluorescent Materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Physics, Thin Film and Nanoscience Laboratory, Suryamaninagar, West Tripura, 799022 Agartala, Tripura, India
Department of Chemistry, Tripura University, Suryamaninagar, West Tripura, 799022 Agartala, Tripura, India
Funding
University Grants Commission · Department of Science and Technology, Ministry of Science and Technology, India
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