Photoinduced Charge Transfer Empowers Ta4C3 and Nb4C3 MXenes with High SERS Performance
Source abstract
Abstract
This study introduces two-dimensional (2D) Ta 4 C 3 and Nb 4 C 3 MXenes as outstanding materials for surface-enhanced Raman scattering (SERS) sensing, marking a significant departure from traditional noble-metal substrates. These MXenes exhibit exceptional SERS capabilities, achieving enhancement factors around 10 5 and detection limits as low as 10 –7 M for various analytes, including environmental pollutants and drugs. The core of their SERS functionality is attributed to the robust interfacial photoinduced charge-transfer interactions between the MXenes and the adsorbed molecules. This deep insight not only advances our understanding of MXene materials in SERS applications but also opens new avenues for developing highly sensitive and selective SERS sensors. The potential of Ta 4 C 3 and Nb 4 C 3 MXenes to revolutionize SERS technology underscores their importance in environmental monitoring, food safety, and beyond.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: MXene and MAX Phase Materials · 2D Materials and Applications · Advanced Memory and Neural Computing
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
School of Mechanics and Optoelectronic Physics, Anhui University of Science and Technology, Huainan 232001, China
Key Laboratory of Quantum Materials and Devices of Ministry of Education, School of Physics, Southeast University, Nanjing 211189, China
The First Affiliated Hospital of Anhui University of Science and Technology (Huainan First People’s Hospital), Huainan 232001, China
Funding
China Postdoctoral Science Foundation · Natural Science Foundation of Jiangsu Province · University Natural Science Research Project of Anhui Province · National Natural Science Foundation of China · Anhui University of Science and Technology · Jiangsu Funding Program for Excellent Postdoctoral Talent · Scientific Research Foundation for High-level Talents of Anhui University of Science and Technology
References (65)
Show source-provided references
1. 10.1021/acs.accounts.9b0054510.1021/acs.accounts.9b00545 ↗
2. 10.1021/acs.chemrev.2c0031610.1021/acs.chemrev.2c00316 ↗
3. 10.1007/s11467-021-1047-z10.1007/s11467-021-1047-z ↗
4. 10.1021/acs.chemrev.7b0002710.1021/acs.chemrev.7b00027 ↗
5. 10.1016/j.bios.2024.11605910.1016/j.bios.2024.116059 ↗
6. 10.1021/acs.nanolett.3c0223810.1021/acs.nanolett.3c02238 ↗
7. 10.1021/acs.jpclett.4c0104110.1021/acs.jpclett.4c01041 ↗
8. 10.1021/acsnano.1c0717610.1021/acsnano.1c07176 ↗
9. 10.1002/adma.20231234810.1002/adma.202312348 ↗
10. 10.1038/s41467-023-38198-x10.1038/s41467-023-38198-x ↗
11. 10.1002/anie.20191337510.1002/anie.201913375 ↗
12. 10.1038/ncomms1490310.1038/ncomms14903 ↗
13. 10.1021/acs.nanolett.2c0321810.1021/acs.nanolett.2c03218 ↗
14. 10.1038/s41467-019-08656-610.1038/s41467-019-08656-6 ↗
15. 10.1021/acsami.1c1197710.1021/acsami.1c11977 ↗
16. 10.1021/acs.nanolett.3c0181010.1021/acs.nanolett.3c01810 ↗
17. 10.1021/acs.langmuir.3c0147910.1021/acs.langmuir.3c01479 ↗
18. 10.1039/C8CC00339D10.1039/C8CC00339D ↗
19. 10.1021/jacs.8b0941410.1021/jacs.8b09414 ↗
20. 10.1038/s41467-020-14774-310.1038/s41467-020-14774-3 ↗
21. 10.1039/D2NR06280A10.1039/D2NR06280A ↗
22. 10.1039/D2NH00556E10.1039/D2NH00556E ↗
23. 10.1002/adma.20230077110.1002/adma.202300771 ↗
24. 10.1021/acsami.0c0090810.1021/acsami.0c00908 ↗
25. 10.1007/s40843-020-1283-810.1007/s40843-020-1283-8 ↗
26. 10.1021/acsnano.7b0312910.1021/acsnano.7b03129 ↗
27. 10.1007/s40820-020-00565-410.1007/s40820-020-00565-4 ↗
28. 10.1039/D4TC01880J10.1039/D4TC01880J ↗
29. 10.1557/s43577-022-00276-810.1557/s43577-022-00276-8 ↗
30. 10.1021/acsami.2c1080010.1021/acsami.2c10800 ↗
31. 10.1016/j.spmi.2012.04.01410.1016/j.spmi.2012.04.014 ↗
32. 10.1002/adma.20130413810.1002/adma.201304138 ↗
33. 10.1002/adfm.20230668010.1002/adfm.202306680 ↗
34. 10.1016/j.jallcom.2019.04.09610.1016/j.jallcom.2019.04.096 ↗
35. 10.1016/j.jallcom.2021.16352910.1016/j.jallcom.2021.163529 ↗
36. 10.1021/acsnano.7b0724110.1021/acsnano.7b07241 ↗
37. 10.1126/science.abf158110.1126/science.abf1581 ↗
38. 10.1002/adma.20170328410.1002/adma.201703284 ↗
39. 10.1039/D3TC04692C10.1039/D3TC04692C ↗
40. 10.1002/smll.20231057610.1002/smll.202310576 ↗
41. 10.1016/j.elecom.2022.10738010.1016/j.elecom.2022.107380 ↗
42. 10.1002/pssr.20110525310.1002/pssr.201105253 ↗
43. 10.1002/advs.20190031010.1002/advs.201900310 ↗
44. 10.1088/1402-4896/ad13e010.1088/1402-4896/ad13e0 ↗
45. 10.1038/s41567-022-01541-y10.1038/s41567-022-01541-y ↗
46. 10.1021/acs.jpcc.1c0106410.1021/acs.jpcc.1c01064 ↗
47. 10.1002/jrs.310110.1002/jrs.3101 ↗
48. 10.1002/admi.20210218510.1002/admi.202102185 ↗
49. 10.1021/acs.jpcc.8b0442710.1021/acs.jpcc.8b04427 ↗
50. 10.1021/j150668a03810.1021/j150668a038 ↗
51. 10.1039/D2NH00450J10.1039/D2NH00450J ↗
52. 10.1364/OL.52218310.1364/OL.522183 ↗
53. 10.1039/D2NH00023G10.1039/D2NH00023G ↗
54. 10.1016/j.snb.2016.11.02110.1016/j.snb.2016.11.021 ↗
55. 10.1002/smll.20210075510.1002/smll.202100755 ↗
56. 10.1021/acsami.9b1715010.1021/acsami.9b17150 ↗
57. 10.1002/adma.20160479710.1002/adma.201604797 ↗
58. 10.1002/smll.20210344210.1002/smll.202103442 ↗
59. 10.1038/s41467-018-05237-x10.1038/s41467-018-05237-x ↗
60. 10.1088/1361-6528/ab4f1110.1088/1361-6528/ab4f11 ↗
61. 10.1007/s12274-021-3904-z10.1007/s12274-021-3904-z ↗
62. 10.1002/adfm.20230182110.1002/adfm.202301821 ↗
63. 10.1039/D2NA00830K10.1039/D2NA00830K ↗
64. 10.1039/C7FD00138J10.1039/C7FD00138J ↗
65. 10.1002/adom.20230194810.1002/adom.202301948 ↗