Boron Spin-On Doping for Poly-Si/SiOx Passivating Contacts
Source abstract
Abstract
Herein, we fabricate and characterize p-type passivating contacts based on industrial intrinsic polycrystalline silicon (poly-Si)/thermal-SiOx/n-type crystalline Si (c-Si) substrates using a spin-on doping technique. The impacts of drive-in temperature, drive-in dwell time, and intrinsic poly-Si thickness on the boron-doped poly-Si passivating contacts are investigated. First, the contact passivation quality improves with an increasing thermal budget (<950 °C) but then decreases again for excessive thermal annealing (>950 °C). Second, the thickness of the intrinsic poly-Si film shows only a little impact on the performance. After a hydrogenation treatment by depositing an AlOx/SiNx stack and subsequent annealing in forming gas, the optimized poly-Si passivating contacts show an implied open-circuit voltage (iVoc) > 720 mV, together with a contact resistivity (ρc) below 5 mΩ cm2. These results demonstrate that boron spin-on doping is a promising alternative to the conventional BBr3 thermal diffusion for the fabrication of p-type poly-Si passivating contacts.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Silicon and Solar Cell Technologies · Semiconductor materials and interfaces · Integrated Circuits and Semiconductor Failure Analysis
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
School of Engineering, The Australian National University, Canberra, Australian Capital Territory 2600, Australia
Department of Electrical and Electronic Engineering, The University of Melbourne, Victoria 3010, Australia
Jinko Solar Co., Ltd, 1 Jingke Road, Shangrao, Jiangxi 334100, China
Zhejiang Jinko Solar Co., Ltd, 58 Yuanhua Road, Haining, Jiaxing, Zhejiang 314416, China
Funding
Australian Centre for Advanced Photovoltaics · Australian Renewable Energy Agency
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