Tuning the Thermoelectric Performance of SnTe via Dual-Site Electronic Donation and Super-Saturation Solution
Source abstract
Abstract
In this work, a dual-site electronic doping with Sb and I in SnTe has been carried out, and the impact of codoping on the electrical and thermal transport properties has been studied in detail. Due to the electron donation effect, the excessive hole density has been reduced, and the Seebeck coefficient (S) has been increased effectively. Moreover, transmission electron microscope (TEM) characterization analysis showed that a multiscale microstructure has been fabricated to suppress phonon propagation, thus decreasing the lattice thermal conductivity due to Sb content beyond its solubility limit. Combined with the enhancement of electronic transport properties and large reduction on thermal conductivity, a thermoelectric figure of merit of ∼0.97 at 873 K is obtained in the Sn0.88Sb0.12Te0.97I0.03 alloy, which is a 143% increase compared to that of the SnTe matrix.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advanced Thermoelectric Materials and Devices · Thermal properties of materials · Chalcogenide Semiconductor Thin Films
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
State Key Laboratory of Material Processing and Die & Mould Technology, Huazhong University of Science & Technology, Wuhan 430074, P. R. China
Wuhan National High Magnet Field Center, Huazhong University of Science & Technology, Wuhan 430074, P. R. China
Funding
Ministry of Education of the People's Republic of China · Huazhong University of Science and Technology · National Natural Science Foundation of China
References (32)
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