journal article·2020-03-23

zT = 1.1 in CuInTe2 Solid Solutions Enabled by Rational Defect Engineering

Yanci Yan, Xu Lu, Guoyu Wang, Xiaoyuan Zhou

ACS Applied Energy Materials· Volume 3· Issue 3
Publisher page

Abstract

In this study, the synthesis and thermoelectric performance of CuInTe2–In2Te3 and Cu0.85Ag0.15InTe2–In2Te3 solid solutions are reported. The experimental results associated with model fitting reveal that the cation vacancies generated by creating solid solutions with a compound with a smaller cation-to-anion ratio can strongly scatter phonons with high frequency, which remarkably decrease the total as well as lattice thermal conductivity of the CuInTe2 system and finally realize an enhanced thermoelectric properties compared to the pristine sample. Furthermore, substitutional Ag/Cu defects integrated with vacancies lead to a further reduction in lattice thermal conductivity. With the benefit from the rational defect design, a high figure of merit of 1.1 is gained at 840 K for the sample (Cu0.85Ag0.15InTe2)0.98(In2Te3)0.02. In addition, a 188% improvement on average zT is obtained. This work provides an effective method for boosting thermoelectric performance of chalcopyrite compounds by defect engineering on multiple types of defects.
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Research context

OpenAlex topics: Advanced Thermoelectric Materials and Devices · Chalcogenide Semiconductor Thin Films · Quantum Dots Synthesis And Properties

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Chongqing Key Laboratory of Soft Condensed Matter Physics and Smart Materials, College of Physics, Chongqing University, Chongqing 401331, P. R. China

Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing 400714, P. R. China

University of Chinese Academy of Sciences, Beijing 100004, P. R. China

Key Laboratory of Low-Grade Energy Utilization Technologies and Systems, Ministry of Education of China, Chongqing University, Chongqing 400044, P. R. China

Funding

Chongqing Science and Technology Commission · Ministry of Education of the People's Republic of China · National Natural Science Foundation of China · Chinese Academy of Sciences

References (47)

Show source-provided references
1. 10.1126/science.115889910.1126/science.1158899 ↗
2. 10.1126/science.aak999710.1126/science.aak9997 ↗
3. 10.1002/aenm.20170179710.1002/aenm.201701797 ↗
4. 10.1002/adma.20160588410.1002/adma.201605884 ↗
5. 10.1039/C5EE03366G10.1039/C5EE03366G ↗
6. 10.1038/am.2017.7710.1038/am.2017.77 ↗
7. 10.1038/ncomms1028710.1038/ncomms10287 ↗
8. 10.1038/nature0999610.1038/nature09996 ↗
9. 10.1103/PhysRevLett.108.16660110.1103/PhysRevLett.108.166601 ↗
10. 10.1039/C6TA07015A10.1039/C6TA07015A ↗
11. 10.1016/j.ensm.2018.01.00610.1016/j.ensm.2018.01.006 ↗
12. 10.1038/nature2447910.1038/nature24479 ↗
13. 10.1021/ja306527n10.1021/ja306527n ↗
14. 10.1039/C5TC02948A10.1039/C5TC02948A ↗
15. 10.1016/j.mattod.2018.03.03910.1016/j.mattod.2018.03.039 ↗
16. 10.1021/acsami.6b1279610.1021/acsami.6b12796 ↗
17. 10.1002/aenm.20120097310.1002/aenm.201200973 ↗
18. 10.1038/ncomms1382810.1038/ncomms13828 ↗
19. 10.1126/science.aaa416610.1126/science.aaa4166 ↗
20. 10.1002/aenm.20160258210.1002/aenm.201602582 ↗
21. 10.1038/nnano.2013.12910.1038/nnano.2013.129 ↗
22. 10.1016/j.jmat.2016.05.00910.1016/j.jmat.2016.05.009 ↗
23. 10.1039/C4TA05285D10.1039/C4TA05285D ↗
24. 10.1016/j.mtphys.2017.10.00110.1016/j.mtphys.2017.10.001 ↗
25. 10.1002/advs.20160019610.1002/advs.201600196 ↗
26. 10.1038/nphys349210.1038/nphys3492 ↗
27. 10.1038/nmat327310.1038/nmat3273 ↗
28. 10.1021/acs.chemmater.6b0241610.1021/acs.chemmater.6b02416 ↗
29. 10.1039/C6TA06033A10.1039/C6TA06033A ↗
30. 10.1063/1.310978810.1063/1.3109788 ↗
31. 10.1021/acs.chemmater.5b0370810.1021/acs.chemmater.5b03708 ↗
32. 10.1039/C4CP01294A10.1039/C4CP01294A ↗
33. 10.1002/adma.20140005810.1002/adma.201400058 ↗
34. 10.1039/C6QI00162A10.1039/C6QI00162A ↗
35. 10.1002/1521-396X(199708)162:2<661::AID-PSSA661>3.0.CO;2-M10.1002/1521-396X(199708)162:2<661::AID-PSSA661>3.0.CO;2-M ↗
36. 10.1103/PhysRevB.46.613110.1103/PhysRevB.46.6131 ↗
37. 10.1016/j.ceramint.2017.08.21310.1016/j.ceramint.2017.08.213 ↗
38. 10.1103/PhysRev.120.114910.1103/PhysRev.120.1149 ↗
39. 10.1088/0370-1298/68/12/30310.1088/0370-1298/68/12/303 ↗
40. Alekseev Gt · Sov. Phys. Semicond · 1971 · 4 · 1122
41. 10.1039/C6TA10770B10.1039/C6TA10770B ↗
42. 10.1002/pssa.221122012210.1002/pssa.2211220122 ↗
43. 10.1002/adfm.20170511710.1002/adfm.201705117 ↗
44. 10.1016/j.materresbull.2018.01.02910.1016/j.materresbull.2018.01.029 ↗
45. 10.1063/1.487225010.1063/1.4872250 ↗
46. 10.1016/j.jpcs.2015.03.01210.1016/j.jpcs.2015.03.012 ↗
47. 10.1088/1674-1056/26/9/09720110.1088/1674-1056/26/9/097201 ↗