Rational Design of Excellent V2O5-Based Cathodes of Zinc-Ion Batteries via the Regulation of the Zn2+ Migration Kinetic Process
Source abstract
Abstract
Identifying suitable vanadium-based cathodes that possess highly open crystal structures and elevated theoretical capacities for zinc-ion batteries (ZIBs) has always been a challenging task. Although the typical layered vanadium oxide V 2 O 5 exhibits good zinc-ion storage capability, its slow kinetic behavior and poor electrical conductivity limit further development. To address this challenge, we have obtained a series of V 2 O 5 @ZVMF- X ( X = 1, 2, 3) cathodes by employing a combination of hydrothermal, liquid-phase, and postcalcination methods using the Zn-V-MOF precursor. As a result, these cathodes deliver porous 1D channels and a unique dense nanosheet structure. Moreover, the V 2 O 5 @ZVMF- X cathodes demonstrate excellent electrochemical zinc storage capabilities, among which the V 2 O 5 @ZVMF-2 cathode delivers the most outstanding electrochemical capacity and rate properties. The V 2 O 5 @ZVMF-2 cathode, with more zinc ion diffusion channels and electrochemically active sites, achieves a significant specific capacity of 504.6 mAh g –1 at 0.1 A g –1, along with a rapid Zn 2+ migration rate. Additionally, various ex situ characterization techniques have been conducted to confirm the reversible insertion and extraction of Zn 2+ in the V 2 O 5 @ZVMF-2 cathode. This work provides a reference for expanding the application of advanced cathode materials derived from Zn-V-MOF precursors.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advanced battery technologies research · Advanced Battery Technologies Research · Advanced Battery Materials and Technologies
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
School of Automation and Intelligent Sensing
Shanghai Jiao Tong University
National Engineering Research Center for Nanotechnology, 28 East Jiang Chuan Road, Shanghai 200241, China
Funding
National Key Research and Development Program of China · National Natural Science Foundation of China · Giga Force Electronics
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