DataVXACS Applied Energy MaterialsPaper
journal article·2024-06-24

Silicon Heterojunction Solar Cells Utilizing Dual-Layer Intrinsic Amorphous Silicon with Intermediate Hydrogen Plasma Treatment as the Passivation Layer

Xuejiao Wang, Guanlan Chen, Yuxiang Li, Ying Liu, Guangyi Wang, Jilei Wang, Heze Yuan, Bingquan Liang, Liyou Yang, Xinliang Chen, Shengzhi Xu, Ying Zhao, Xiaodan Zhang

ACS Applied Energy Materials· Volume 7· Issue 12
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Source abstract

Abstract

The elevated open-circuit voltage ( V oc ) observed in silicon heterojunction solar cells is ascribed to the excellent passivation of the amorphous–crystalline silicon interface. This study employs a dual-layer intrinsic amorphous silicon passivation layer, supplemented with intermediate hydrogen plasma treatment (HPT), which enhances the passivation effectiveness and simultaneously augments the fill factor (FF) of the solar cell. Fourier transform infrared (FTIR) spectroscopy indicates that HPT leads to an increase in the film’s hydrogen content while concomitantly diminishing the microstructure factor. Simulation and solar cell performance further elucidate that HPT exerts influence on the tunneling mechanisms involved in charge carrier transport, resulting in a heightened FF. Upon the incorporation of HPT, the V oc increased by 19.1 mV and the photoelectric conversion efficiency (PCE) increased by 0.65%.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Silicon and Solar Cell Technologies · Thin-Film Transistor Technologies · Silicon Nanostructures and Photoluminescence

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Institute of Photoelectronic Thin Film Devices and Technology, Renewable Energy Conversion and Storage Center, Nankai University, Tianjin 300350, P. R. China

Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, Tianjin 300350, P. R. China

State Key Laboratory of Photovoltaic Materials and Cells, Tianjin 300192, P. R. China

Engineering Research Center of Thin Film Photoelectronic Technology of Ministry of Education, Tianjin 300350, P. R. China

Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin 300072, P. R. China

Jinneng Clean Energy Technology Ltd., Lvliang, Shanxi 032100, P. R. China

Funding

Natural Science Foundation of Tianjin Municipality · Nankai University · National Key Research and Development Program of China · National Natural Science Foundation of China · Overseas Expertise Introduction Project for Discipline Innovation · Project of high-efficiency heterojunction solar cell technology and equipment industrialization · Haihe Laboratory of Sustainable Chemical Transformations

References (33)

Show source-provided references
1. 10.1016/j.jnoncrysol.2021.12116610.1016/j.jnoncrysol.2021.121166 ↗
2. 10.1038/s41560-023-01255-210.1038/s41560-023-01255-2 ↗
3. 10.1002/pip.362010.1002/pip.3620 ↗
4. 10.1016/j.egypro.2012.02.01310.1016/j.egypro.2012.02.013 ↗
5. 10.1063/1.496694110.1063/1.4966941 ↗
6. 10.1007/s10854-020-03486-510.1007/s10854-020-03486-5 ↗
7. 10.1063/1.255997510.1063/1.2559975 ↗
8. 10.1007/s10854-020-04023-010.1007/s10854-020-04023-0 ↗
9. 10.1016/j.solmat.2020.11064310.1016/j.solmat.2020.110643 ↗
10. 10.1063/1.504515510.1063/1.5045155 ↗
11. 10.1002/pssa.20200074310.1002/pssa.202000743 ↗
12. 10.1016/j.tsf.2020.13830510.1016/j.tsf.2020.138305 ↗
13. 10.1002/solr.20230010310.1002/solr.202300103 ↗
14. 10.1063/1.242690010.1063/1.2426900 ↗
15. 10.1088/0022-3727/49/16/16530510.1088/0022-3727/49/16/165305 ↗
16. 10.1063/1.364189910.1063/1.3641899 ↗
17. 10.1016/j.solener.2018.03.06810.1016/j.solener.2018.03.068 ↗
18. 10.1016/j.solmat.2021.11141210.1016/j.solmat.2021.111412 ↗
19. 10.1002/pip.377510.1002/pip.3775 ↗
20. Su, Q.; Lin, H.; Wang, G.; Tang, H.; Xue, C.; Li, Z.; Xu, X.; Gao, P.Theoretical limiting-efficiency assessment on advanced crystalline silicon solar cells with Auger ideality factor and wafer thickness modifications Prog. Photovoltaics: Res. Appl. 202410.1002/pip.3790.10.1002/pip.3790 ↗
21. 10.1103/PhysRevB.16.355610.1103/PhysRevB.16.3556 ↗
22. 10.1039/D0NA00791A10.1039/D0NA00791A ↗
23. 10.1038/nature0086610.1038/nature00866 ↗
24. 10.1016/j.apsusc.2021.14955110.1016/j.apsusc.2021.149551 ↗
25. 10.1103/PhysRevB.43.662710.1103/PhysRevB.43.6627 ↗
26. 10.1063/1.499479510.1063/1.4994795 ↗
27. 10.1002/pip.330010.1002/pip.3300 ↗
28. 10.1109/JPHOTOV.2019.295765510.1109/JPHOTOV.2019.2957655 ↗
29. 10.1063/1.326731610.1063/1.3267316 ↗
30. 10.1103/PhysRevB.83.16531410.1103/PhysRevB.83.165314 ↗
31. 10.1016/j.solmat.2021.11150110.1016/j.solmat.2021.111501 ↗
32. 10.1016/j.mser.2020.10057910.1016/j.mser.2020.100579 ↗
33. 10.1021/acsanm.0c0270410.1021/acsanm.0c02704 ↗