Source abstract
Abstract
The broad applications of manipulation of electromagnetic waves (EMWs) in imaging, detection, communication, and electronic countermeasures have drawn extensive attention to the metasurface. In these applications, maintaining transparency to visible light is challenging, especially when high transmittance in the infrared band is also required, not to mention when the substrate is a nondevelopable surface. Although ITO-based metasurfaces can transmit visible light, ITO cannot transmit infrared and has poor mechanical properties, coupled with shortcomings such as the scarcity of indium, which together limit their application. Here, the random metal grid and coding metasurface are first integrated, which achieves a random metal grid-based coding metasurface (RMGCM), for flexible microwave manipulation while maintaining high transmittance from visible to infrared. As a proof of principle, a polarization-insensitive, broadband range (19–23 GHz) RMGCM that can scatter microwaves over a wide angle range of 0 to 45° is obtained. The uniformity of the stray light of the random metal grid and the good substrate compatibility of its fabrication technique, coupled with the powerful ability of the metasurface provide RMGCM with broad application prospects. One of the potential applications is the cockpit of a stealth aircraft that requires virtual shaping. In addition, combined with flexible substrates and random metal grids with smaller periods, this structure can be further improved to extend to wearable devices and terahertz fields.
Source: openalex_inverted_index · Quality: baseline
Affiliations
School of Instrumentation Science and Engineering, Harbin 150001, China
School of Mechanical and Electric Engineering, Soochow University, Suzhou 215006, China
School of Optics and Photonics, Beijing Institute of Technology, Beijng 100081, China
Science and Technology on Electromagnetic Scattering Laboratory, Beijng 100854, China
Key Laboratory of Micro-systems and Micro-structures Manufacturing (Harbin Institute of Technology), Ministry of Education, Harbin 150080, China
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Funding
National Natural Science Foundation of China