journal article·2023-06-12

Raising n-Type Thermoelectric Performance in (Te, Zn)-Codoped CuAgSe

Thi Huong Nguyen, Van Quang Nguyen, Jong Ho Park, Thi Toan Tran, Anh Tuan Pham, Sudong Park, Jong-Soo Rhyee, Sunglae Cho

ACS Applied Energy Materials· Volume 6· Issue 11
Publisher page

Abstract

We have successfully fabricated undoped and (Te, Zn)-codoped n-type CuAgSe polycrystals. For doping studies, we kept 5% Te over Se and changed from 0 to 10% Zn over Cu. (Te, Zn) codoping on CuAgSe reduces the lattice thermal conductivity to about 0.3 W m –1 K –1 at 673 K and increases the electrical conductivity. In particular, a ZT value of 0.91 was achieved at 623 K, which is the highest ZT value in n-type CuAgSe. Our results thus indicate that Te and Zn codoping is a potential way to improve the thermoelectric performance of n-type CuAgSe.
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Research context

OpenAlex topics: Advanced Thermoelectric Materials and Devices · Chalcogenide Semiconductor Thin Films · Quantum Dots Synthesis And Properties

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Physics and Energy Harvest Storage Research Center, University of Ulsan, Ulsan 44610, Republic of Korea

Department of Physics, Nha Trang University, Nha Trang 650000, Vietnam

Neutron Science Division, Korea Atomic Energy Research Institute, Daejeon 34057, Republic of Korea

Thermoelectric Conversion Research Center, Korea Electrotechnology Research Institute (KERI), Changwon 51543, Republic of Korea

Quantum Technology Institute, Korea Research Institute of Standards and Science, Daejeon 34113, Republic of Korea

Department of Applied Physics, Integrated Education Institute for Frontier Science and Technology (BK21 Four) and Institute of Natural Sciences, Kyung Hee University, Yongin 17104, Republic of Korea

Funding

National Research Foundation of Korea

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