Source abstract
Abstract
Although the power conversion efficiency (PCE) of single-junction organic solar cells (OSCs) has exceeded more than 19%, the biggest obstacle to the commercial application of OSCs is the low device stability. Herein, this work reports the development of hydrated vanadium pentoxide (HVO) as a hole transport layer (HTL) with outstanding hole-extracting capabilities by a simple synthesis process and its use in the non-fullerene-acceptor-based binary and ternary OSCs. OSCs based on PM6:BTP-eC9 using an indium tin oxide/hydrated vanadium pentoxide (ITO/HVO) anode exhibit a maximum PCE of 13.33%, which is higher than ITO/poly(3,4-ethylene dioxythiophene):(polystyrene sulfonate) (PEDOT:PSS) (12.09%). Additionally, ternary (with an active layer of PM6:BTP-eC9:PC 71 BM) devices were also fabricated to analyze the impact of HVO HTL and achieved a PCE of 14.34%. The higher PCE is found to originate from the much higher work function (WF) of ITO/HVO than ITO/PEDOT:PSS. Furthermore, to replace a sophisticated thermal evaporation technique with a solution-processed, we fabricated inverted devices with HVO instead of control MoO 3 HTL. The highest occupied molecular orbital (HOMO) energy level of HVO is nearly equal to MoO 3, and the device based on HVO attributed a PCE of 7.47%, which is higher than MoO 3 (6.70%)-based devices. This work provides a low-cost, highly efficient, and solution-processed HTL material for OSCs with long-term air stability.
Source: openalex_inverted_index · Quality: baseline
Affiliations
Department of Physics, The LNM Institute for Information Technology, Jamdoli, Jaipur, Rajasthan 302031, India
Organic and Hybrid Electronic Device Laboratory, Department of Energy Science and Engineering, Indian Institute of Technology Delhi, New Delhi 110016, India
Department of Physics, Malviya National Institute of Technology, JLN Marg, Jaipur 302017, India
Department of Electronics Communication Engineering, The LNM Institute for Information Technology, Jamdoli, Jaipur, Rajasthan 302031, India
Funding
Department of Science and Technology, Ministry of Science and Technology, India