journal article·2023-08-14

Improving Thermoelectric Performance of n-Type Mg3Bi2-Based Materials by Introducing a Spatially Confined Magnetic Ordered Structure

Bowen Huang, Pengfei Luo, Zhili Li, Xin Liu, Yuting Zhang, Yuanrui Tang, Juanjuan Xing, Jiye Zhang, Kai Guo, Zirui Dong, Jun Luo

ACS Applied Energy Materials· Volume 6· Issue 15
Publisher page

Abstract

Magnetism, which relates to the spin and orbital degrees of freedom, is recently considered as the fountain of some potentially paradigm-changing mechanisms to decouple the adversely interdependent thermal and electrical transport parameters of thermoelectric materials. Herein, we construct a thermo-electro-magnetic coupling thermoelectric system by introducing a spatially confined ferromagnetic CrTe secondary phase into the Mg 3.4 Bi 1.5 Sb 0.5 (MBA) matrix. It is found that the spatially confined magnetic ordered structure, CrTe, can act as electron injection units to substantially promote the carrier concentration of the MBA matrix without deteriorating the carrier mobility, which usually occurs in the uniform magnetic-element doping systems. An increase in the Seebeck coefficient of the CrTe-incorporated system due to the magnetic phase transition was also acknowledged, which further confirms the advantage of introducing spin and orbital degrees of freedom into the thermoelectric materials. Combined with the enhanced phonon scattering by the second phase, a maximum zT value ∼1.1 was achieved in the 0.35 wt % CrTe/Mg 3.4 Bi 1.5 Sb 0.5 composite at 587 K.
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Research context

OpenAlex topics: Advanced Thermoelectric Materials and Devices · Heusler alloys: electronic and magnetic properties · 2D Materials and Applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

School of Materials Science and Engineering, Shanghai University, 99 Shangda Road, Shanghai 200444, China

School of Physics and Materials Science, Guangzhou University, Guangzhou 510006, China

Key Lab of Si-based Information Materials & Devices and Integrated Circuits Design, Department of Education of Guangdong Province, Guangzhou 510006, China

Funding

National Key Research and Development Program of China · National Natural Science Foundation of China

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