journal article·2021-09-27

Highly Suppressed Thermal Conductivity in Diamond-like Cu2SnS3 by Dense Dislocation

Chao Li, Haili Song, Yan Cheng, Ruijuan Qi, Rong Huang, Chengqiang Cui, Yifeng Wang, Yu Zhang, Lei Miao

ACS Applied Energy Materials· Volume 4· Issue 9
Publisher page

Abstract

Cu2SnS3 is a promising low-cost and eco-friendly thermoelectric material. However, its rigid diamond crystal structure leads to a high thermal conductivity and hence its overall poor thermoelectric properties. Here we show Ni doping at the Sn site can introduce a dense dislocation of density of ∼4.83 × 109 cm–2 to Cu2SnS3. The abundant dislocations generate a large strain within the matrix, which effectively scatters heat-carrying phonons. The resultant lowest κlatt reaches ∼0.41 W m–1 K–1 at 723 K, approaching the theoretical limit (0.30 W m–1 K–1). The regulation strategy on dislocations is expected to reduce the thermal conductivity and improve the functionalities of other diamond-like materials.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Advanced Thermoelectric Materials and Devices · Thermal properties of materials · Physics of Superconductivity and Magnetism

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

State Key Laboratory of Precision Electronic Manufacturing Technology and Equipment, Guangdong University of Technology, Guangzhou, 510006 China

Ji Hua Laboratory, Foshan, Guangdong 528299, China

Key Laboratory of Bioinorganic and Synthetic Chemistry of Ministry of Education, School of Chemistry, Sun Yat-Sen University, Guangzhou, Guangdong 510275, China

Key Laboratory of Polar Materials and Devices (MOE) and Department of Electronics, East China Normal University, Shanghai, 200062, China

College of Materials Science and Engineering, Nanjing Tech University, Nanjing, 210009, China

Guangxi Key Laboratory of Information Material, Guangxi Collaborative Innovation Center of Structure and Property for New Energy and Materials, School of Material Science and Engineering, Guilin University of Electronic Technology, No.1 Jinji Road, Qixing District, Guilin, Guangxi 51004, China

Department of Materials Science and Engineering, SIT Research Laboratories, Innovative Global Program, Faculty of Engineering, Shibaura Institute of Technology, Tokyo, 135-8548, Japan

Funding

Ministry of Science and Technology of the People's Republic of China · National Natural Science Foundation of China · Guangdong Basic and Applied Basic Research Foundation · Independent research Foundation of Guangxi Key Laboratory of Information Materials

References (30)

Show source-provided references
1. 10.1021/acsaem.9b0222210.1021/acsaem.9b02222 ↗
2. 10.1016/j.xinn.2021.10010110.1016/j.xinn.2021.100101 ↗
3. 10.1021/jacs.7b0514310.1021/jacs.7b05143 ↗
4. 10.1016/j.joule.2019.02.00810.1016/j.joule.2019.02.008 ↗
5. 10.1002/adfm.20210121410.1002/adfm.202101214 ↗
6. 10.1038/nature1143910.1038/nature11439 ↗
7. 10.1021/acsaem.1c0038810.1021/acsaem.1c00388 ↗
8. 10.1021/acsaem.1c0055910.1021/acsaem.1c00559 ↗
9. 10.1039/C3EE41437J10.1039/C3EE41437J ↗
10. 10.1038/srep3250110.1038/srep32501 ↗
11. 10.1039/C7TA07140J10.1039/C7TA07140J ↗
12. 10.1063/1.505140710.1063/1.5051407 ↗
13. 10.1126/science.aaa416610.1126/science.aaa4166 ↗
14. 10.1103/PhysRev.114.99510.1103/PhysRev.114.995 ↗
15. 10.1103/PhysRevB.95.24530410.1103/PhysRevB.95.245304 ↗
16. 10.1021/jacs.8b0574110.1021/jacs.8b05741 ↗
17. 10.1103/PhysRevLett.111.09640310.1103/PhysRevLett.111.096403 ↗
18. 10.1103/PhysRevB.86.15520110.1103/PhysRevB.86.155201 ↗
19. 10.17308/kcmf.2020.22/253310.17308/kcmf.2020.22/2533 ↗
20. 10.1039/C9NR04693C10.1039/C9NR04693C ↗
21. 10.1039/C7TA05253G10.1039/C7TA05253G ↗
22. 10.1103/PhysRev.113.104610.1103/PhysRev.113.1046 ↗
23. 10.1038/s41524-019-0232-x10.1038/s41524-019-0232-x ↗
24. 10.1063/1.512703710.1063/1.5127037 ↗
25. 10.1063/5.003826510.1063/5.0038265 ↗
26. 10.1063/1.500035610.1063/1.5000356 ↗
27. 10.1021/acs.nanolett.6b0245010.1021/acs.nanolett.6b02450 ↗
28. 10.1039/C7NR02557B10.1039/C7NR02557B ↗
29. 10.1016/j.xinn.2021.10013410.1016/j.xinn.2021.100134 ↗
30. 10.1016/j.jallcom.2017.08.22710.1016/j.jallcom.2017.08.227 ↗