journal article·2021-05-24Open access

CoSb3-Based Thin-Film Thermoelectric Devices with High Performance Via Electrode Optimization

Dongwei Ao, Fu Li, Yuexing Chen, Jingting Luo, Guangxing Liang, Zhuanghao Zheng, Xiang-Hua Zhang, Ping Fan

ACS Applied Energy Materials· Volume 4· Issue 5

Abstract

Flexible thin-film thermoelectric devices have been extensively studied for powering wearable electronics, particularly as a power source for self-powered sensors or temperature detection. Skutterudite CoSb3 is emerging as one of the most studied candidate materials for thermoelectric applications. This work is focused on comprehensive optimization in terms of CoSb3-based thin films as well as electrode materials and structures with the objective to fabricate high-performance flexible devices. CoSb3-based thin films with nanoparticles for the enhancement of phonon scattering have been fabricated using the vacuum sputtering method. N-type and P-type thin films can be obtained by appropriate doping with Ti and In, respectively. It has been demonstrated that a multilayer structure of electrodes can greatly enhance the thermoelectric performance of thermoelectric devices by increasing the output power and the thermal stability of the device in the air atmosphere. It has also been demonstrated the possibility of obtaining a relatively high output voltage of above 90 mV and a high-power density of 0.46 mW/cm2 at a current intensity of about 0.35 mA with the device. Therefore, many applications can be considered. The thin-film thermoelectric device has also been tested as a thermal sensor, and it exhibits fast responsivity, with a reaction time of a few hundreds of milliseconds, as well as high stability.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Advanced Thermoelectric Materials and Devices · Thermal Radiation and Cooling Technologies · Chalcogenide Semiconductor Thin Films

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, P. R. China

School of Materials Science and Engineering, Hanshan Normal University, Chaozhou 521041, P. R. China

Univ Rennes, CNRS, ISCR (Institut des Sciences Chimiques de Rennes) UMR6226, Rennes F-35000, France

Funding

National Natural Science Foundation of China · Guangdong Basic and Applied Basic Research Foundation · Shenzhen Key Lab Fund

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