Low-Lattice Thermal Conductivity in Zr-Doped Ti₂NiCoSnSb Thermoelectric Double Half-Heusler Alloys

The effect of doping on the thermoelectric properties of Half-Heusler (HH) high-entropy alloy (HEA) Ti 2 NiCoSnSb was studied. Lower thermal conductivity was observed with increased Sb doping. Mass scattering by heavy (Ta, Zr) and light (Al) dopants was studied to further lower the thermal conductivity. Dopants at the level of up to 50% at the Ti site were studied. A high HH phase content was obtained in the Zr-doped samples, and a low-lattice thermal conductivity of 1.9 W/(m·K) was observed. This value is one of the lowest reported lattice thermal conductivities in HH alloys. The poor solubility of Ta led to undissolved Ta in the samples, which enhanced the electrical properties. In the case of Al doping, the NiAl phase raised the power factor value of Ti 1.8 Al 0.2 NiCoSn 0.5 Sb 1.5 to 2.2 × 10 –3 W/(m·K 2 ), which is almost twice the corresponding value reported for Ti 2 NiCoSnSb. Interestingly, a maximum ZT of 0.29 was found in all of the doped systems, although the transport mechanism and microstructure varied widely with the type of dopant. An optimum dopant level of 25% of Zr, 7.5% of Ta, and 10% of Al is necessary to obtain the maximum ZT in these alloys. Compared to HH systems, the HH high-entropy alloy (HEA) systems provide a larger composition field for tuning the transport properties by simultaneous doping of multiple elements to lower the thermal conductivity.