Br-Doped n-Type SnSe2: Single-Crystal Growth and Thermoelectric Properties
Source abstract
Abstract
In this work, pure, large Br-doped SnSe2 single crystals were successfully synthesized using the temperature gradient technique. Br acts as a donor, resulting in electron concentrations up to ∼6.83 × 1019 cm–3 at room temperature. All samples exhibited metal-like electrical resistivities and Seebeck coefficient behaviors over a temperature range of 300–673 K. Br doping greatly improved the power factor, especially along the in-plane direction. We observed anisotropy in the electrical conductivity, Seebeck coefficient, and, most notably, thermal conductivity. An ultralow thermal conductivity was achieved along the out-of-plane direction, leading to a maximum ZTc of 0.54 at 673 K in the Br-doped sample, which is twice as large as that of the in-plane direction, ZTa = 0.25.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advanced Thermoelectric Materials and Devices · Chalcogenide Semiconductor Thin Films · 2D Materials and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Physics and Energy Harvest-Storage Research Center, University of Ulsan, Ulsan 44610, Republic of Korea
Energy Conversion Research Center, Korea Electrotechnology Research Institute (KERI), Changwon 51543, Republic of Korea
Funding
National Research Foundation of Korea
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