journal article·2021-03-22

Br-Doped n-Type SnSe2: Single-Crystal Growth and Thermoelectric Properties

Anh-Tuan Pham, Thi Hoa Vu, Quang V. Nguyen, Minh Thanh Vu, Jong Ho Park, Su-Dong Park, Sunglae Cho

ACS Applied Energy Materials· Volume 4· Issue 3
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Abstract

In this work, pure, large Br-doped SnSe2 single crystals were successfully synthesized using the temperature gradient technique. Br acts as a donor, resulting in electron concentrations up to ∼6.83 × 1019 cm–3 at room temperature. All samples exhibited metal-like electrical resistivities and Seebeck coefficient behaviors over a temperature range of 300–673 K. Br doping greatly improved the power factor, especially along the in-plane direction. We observed anisotropy in the electrical conductivity, Seebeck coefficient, and, most notably, thermal conductivity. An ultralow thermal conductivity was achieved along the out-of-plane direction, leading to a maximum ZTc of 0.54 at 673 K in the Br-doped sample, which is twice as large as that of the in-plane direction, ZTa = 0.25.
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Research context

OpenAlex topics: Advanced Thermoelectric Materials and Devices · Chalcogenide Semiconductor Thin Films · 2D Materials and Applications

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Affiliations

Department of Physics and Energy Harvest-Storage Research Center, University of Ulsan, Ulsan 44610, Republic of Korea

Energy Conversion Research Center, Korea Electrotechnology Research Institute (KERI), Changwon 51543, Republic of Korea

Funding

National Research Foundation of Korea

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