journal article·2021-03-22

Yttrium Fluoride-Based Electron-Selective Contacts for Crystalline Silicon Solar Cells

Zhiming Chen, Wenjie Lin, Zongtao Liu, Lun Cai, Yifeng Chen, Bin Ai, Zongcun Liang, Pingqi Gao, Hui Shen

ACS Applied Energy Materials· Volume 4· Issue 3
Publisher page

Abstract

The development of dopant-free carrier-selective layer demonstrates the potential to overcome parasitic absorption and doping-related recombination caused by heavy doping to realize both low recombination current density (J0c) and low contact resistance (ρc) in simplified procedures. In this work, thermally evaporated yttrium fluoride (YF3) films were demonstrated as electron-selective material for c-Si solar cells. The YF3 interlayers have a low work function of 3.1 eV, allowing the lowest ρc of 17.8 mΩ·cm2 for the n-Si/YF3/Al contacts. N-type Si solar cells based on YF3 for electron-passivated contact were fabricated, reaching an efficiency of 20.8%, an open-circuit voltage of 645 mV, and a fill factor of 80.8%. This indicates the future potential application of dopant-free YF3 electron contact for low-temperature-passivated contact solar cells.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Silicon and Solar Cell Technologies · Semiconductor materials and interfaces · Thin-Film Transistor Technologies

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Institute for Solar Energy Systems, Guangdong Provincial Key Laboratory of Photovoltaic Technology, School of Physics and State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-Sen University, Guangzhou 510006, China

School of Materials, Sun Yat-Sen University, Guangzhou 510275, China

State Key Lab of Photovoltaic Science and Technology, Trina Solar, ChangZhou 213031 China

Shunde-SYSU Institute for Solar Energy, Beijiao, Shunde 528300, China

Jiangsu Collaborative Innovation Center of Photovoltaic Science and Engineering, Changzhou University, Changzhou 213164, Jiangsu Province, China

Funding

National Natural Science Foundation of China · Natural Science Foundation of Guangdong Province · Guangzhou Municipality · Jiangsu Collaborative Innovation Center of Photovoltaic Science and Engineering, Changzhou University

References (50)

Show source-provided references
1. 10.1021/acsaem.0c0151710.1021/acsaem.0c01517 ↗
2. 10.1063/1.510059910.1063/1.5100599 ↗
3. 10.1002/aenm.20180060810.1002/aenm.201800608 ↗
4. 10.1063/1.513920210.1063/1.5139202 ↗
5. 10.1002/aenm.20160260610.1002/aenm.201602606 ↗
6. 10.1002/pip.283810.1002/pip.2838 ↗
7. 10.1063/1.490346710.1063/1.4903467 ↗
8. 10.1109/T-ED.1981.2047810.1109/T-ED.1981.20478 ↗
9. 10.1016/j.solmat.2015.06.05510.1016/j.solmat.2015.06.055 ↗
10. Bivour, M.; Temmler, J.; Zahringer, F.; Glunz, S.; Hermle, M. High Work Function Metal Oxides for the Hole Contact of Silicon Solar Cells, In IEEE 43rd Photovoltaic Specialists Conference, IEEE, 2016; pp 215–220.10.1109/PVSC.2016.7749581 ↗
11. 10.1016/j.rinp.2017.09.03010.1016/j.rinp.2017.09.030 ↗
12. 10.1016/j.solmat.2015.06.04810.1016/j.solmat.2015.06.048 ↗
13. 10.1103/PhysRevB.86.16520210.1103/PhysRevB.86.165202 ↗
14. 10.1109/JPHOTOV.2013.228273710.1109/JPHOTOV.2013.2282737 ↗
15. 10.1038/nenergy.2017.3210.1038/nenergy.2017.32 ↗
16. 10.1016/j.jnoncrysol.2005.01.07410.1016/j.jnoncrysol.2005.01.074 ↗
17. 10.1021/acsenergylett.7b0127910.1021/acsenergylett.7b01279 ↗
18. 10.1016/j.solmat.2010.05.01010.1016/j.solmat.2010.05.010 ↗
19. 10.1063/1.162172010.1063/1.1621720 ↗
20. 10.1016/j.cap.2019.03.00610.1016/j.cap.2019.03.006 ↗
21. 10.1021/acsenergylett.7b0115310.1021/acsenergylett.7b01153 ↗
22. 10.1002/adma.20160092610.1002/adma.201600926 ↗
23. 10.1002/aenm.20160186310.1002/aenm.201601863 ↗
24. 10.1002/adfm.20190784010.1002/adfm.201907840 ↗
25. 10.1021/acsaem.0c0013310.1021/acsaem.0c00133 ↗
26. 10.1016/j.solmat.2018.04.03710.1016/j.solmat.2018.04.037 ↗
27. 10.1016/j.joule.2019.03.00810.1016/j.joule.2019.03.008 ↗
28. 10.1021/acsami.6b0359910.1021/acsami.6b03599 ↗
29. Wu, W.; Lin, W.; Zhong, S.; Paviet-Salomon, B.; Despeisse, M.; Liang, Z.; Boccard, M.; Shen, H.; Ballif, C. 22% Efficient Dopant-Free Interdigitated Back Contact Silicon Solar Cells, In AIP Conference Proceedings, AIP Publishing LLC, 2018; p 040025.10.1063/1.5049288 ↗
30. 10.1002/aenm.20160024110.1002/aenm.201600241 ↗
31. 10.1002/solr.20180007110.1002/solr.201800071 ↗
32. 10.1002/aenm.20180074310.1002/aenm.201800743 ↗
33. 10.1021/nl404389u10.1021/nl404389u ↗
34. 10.1038/nenergy.2015.3110.1038/nenergy.2015.31 ↗
35. 10.1039/C8TA11220G10.1039/C8TA11220G ↗
36. 10.1016/j.nanoen.2020.10449510.1016/j.nanoen.2020.104495 ↗
37. 10.1063/1.492874710.1063/1.4928747 ↗
38. 10.1007/s00339-018-1903-z10.1007/s00339-018-1903-z ↗
39. 10.1109/JPHOTOV.2017.275606610.1109/JPHOTOV.2017.2756066 ↗
40. Irfan I. · 2012 · 8476 · 1610.1117/12.927812 ↗
41. 10.1016/j.matlet.2016.11.05910.1016/j.matlet.2016.11.059 ↗
42. 10.1039/C7RA03368K10.1039/C7RA03368K ↗
43. 10.1016/j.solmat.2016.05.04210.1016/j.solmat.2016.05.042 ↗
44. 10.1109/JPHOTOV.2017.272061910.1109/JPHOTOV.2017.2720619 ↗
45. 10.1021/acsami.8b0287810.1021/acsami.8b02878 ↗
46. 10.1021/acsami.7b1288610.1021/acsami.7b12886 ↗
47. 10.1002/adfm.20200447610.1002/adfm.202004476 ↗
48. 10.1021/acsami.8b1688310.1021/acsami.8b16883 ↗
49. Wetter N. U. · 2013 · 32310.1533/9780857097507.2.323 ↗
50. 10.1016/j.tsf.2011.04.04910.1016/j.tsf.2011.04.049 ↗