Chemical-Pressure-Induced Point Defects Enable Low Thermal Conductivity for Mg2Sn and Mg2Si Single Crystals
Abstract
Research context
OpenAlex topics: Advanced Thermoelectric Materials and Devices · Superconductivity in MgB2 and Alloys · Thermal Expansion and Ionic Conductivity
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Affiliations
Department of Applied Physics, Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan
Institute of Quantum Beam Science, Graduate School of Science and Engineering, Ibaraki University, Tokai 319-1106, Japan
Department of Computer and Network Engineering, Graduate School of Information Sciences, Hiroshima City University, Hiroshima 731-3194, Japan
Materials and Life Science Division, J-PARC Center, Tokai 319-1195, Japan
Department of Physical Science and Engineering, Nagoya Institute of Technology, Nagoya 466-8555, Japan
Frontier Research Institute for Materials Science, Nagoya Institute of Technology, Nagoya 466-8555, Japan
Department of Instrumental Analysis, Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan
Funding
Ministry of Education, Culture, Sports, Science and Technology · Tohoku University · Japan Society for the Promotion of Science · Sumitomo Metal Mining Co., Ltd · Japan Proton Accelerator Research Complex