journal article·2019-02-25

Nascent SEI-Surface Films on Single Crystalline Silicon Investigated by Scanning Electrochemical Microscopy

Eduardo dos Santos Sardinha, Michael Sternad, H. Martin R. Wilkening, Gunther Wittstock

ACS Applied Energy Materials· Volume 2· Issue 2
Publisher page

Abstract

Silicon is a promising high-capacity host material for negative electrodes in lithium-ion batteries with low potential for the lithiation/delithiation reaction that is outside the stability window of organic carbonate electrolytes. Thus, the use of such electrodes critically depends on the formation of a protective solid electrolyte interphase (SEI) from the decomposition products of electrolyte components. Due to the large volume change upon charging, exposure of the electrode material to the electrolyte must be expected, and facile reformation of SEI is a scope for improving the stabilities of such electrodes. Here, we report the formation of incipient SEI layers on monocrystalline silicon by in situ imaging of their passivating properties using scanning electrochemical microscopy after potentiodynamic charging to different final potentials. The images show a local initiation of the SEI growth at potentials of around 1.0 V vs Li/Li+ in 1 M LiClO4 in propylene carbonate.
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Research context

OpenAlex topics: Advancements in Battery Materials · Advanced Battery Technologies Research · Advanced Battery Materials and Technologies

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Affiliations

Carl von Ossietzky University of Oldenburg, School of Mathematics and Natural Sciences, Institute of Chemistry, D-26111 Oldenburg, Germany

Graz University of Technology (NAWI Graz), Christian Doppler Laboratory for Lithium Batteries, Institute for Chemistry and Technology of Materials, A-8010 Graz, Austria

Funding

Bundesministerium f?r Bildung und Forschung · Bundesministerium f?r Wissenschaft, Forschung und Wirtschaft · Minist?rio da Ci?ncia, Tecnologia e Inova??o · ?sterreichische Nationalstiftung f?r Forschung, Technologie und Entwicklung

References (32)

Show source-provided references
1. 10.1038/451652a10.1038/451652a ↗
2. 10.1016/j.ssi.2008.01.09510.1016/j.ssi.2008.01.095 ↗
3. 10.1007/s10854-017-7325-410.1007/s10854-017-7325-4 ↗
4. 10.1016/0378-7753(94)02073-C10.1016/0378-7753(94)02073-C ↗
5. 10.1021/acs.jpcc.5b0249010.1021/acs.jpcc.5b02490 ↗
6. 10.1149/1.165242110.1149/1.1652421 ↗
7. 10.1007/s40820-014-0008-210.1007/s40820-014-0008-2 ↗
8. 10.1149/2.0391504jes10.1149/2.0391504jes ↗
9. 10.1149/1.212885910.1149/1.2128859 ↗
10. 10.1149/2.1441707jes10.1149/2.1441707jes ↗
11. 10.1038/3510464410.1038/35104644 ↗
12. 10.1016/S0013-4686(01)00858-110.1016/S0013-4686(01)00858-1 ↗
13. 10.1016/j.jpowsour.2005.01.00610.1016/j.jpowsour.2005.01.006 ↗
14. 10.1524/zpch.2009.608610.1524/zpch.2009.6086 ↗
15. 10.1016/j.joule.2018.04.00210.1016/j.joule.2018.04.002 ↗
16. 10.1021/cm203419510.1021/cm2034195 ↗
17. 10.1039/C6NR00825A10.1039/C6NR00825A ↗
18. 10.1002/ente.20160014110.1002/ente.201600141 ↗
19. 10.1039/C5CP02268A10.1039/C5CP02268A ↗
20. 10.1039/c3cc44576c10.1039/c3cc44576c ↗
21. 10.1002/anie.20140393510.1002/anie.201403935 ↗
22. 10.1149/2.0031513jes10.1149/2.0031513jes ↗
23. 10.1002/ente.20160007110.1002/ente.201600071 ↗
24. 10.1039/C6CC02493A10.1039/C6CC02493A ↗
25. 10.1149/2.0731603jes10.1149/2.0731603jes ↗
26. 10.1149/1.183611910.1149/1.1836119 ↗
27. 10.1038/srep3171210.1038/srep31712 ↗
28. 10.1016/j.jnoncrysol.2005.09.03510.1016/j.jnoncrysol.2005.09.035 ↗
29. 10.1002/elan.20070383210.1002/elan.200703832 ↗
30. 10.1016/S0378-7753(01)00523-710.1016/S0378-7753(01)00523-7 ↗
31. 10.1016/S0378-7753(03)00268-410.1016/S0378-7753(03)00268-4 ↗
32. 10.1007/s00216-004-2522-410.1007/s00216-004-2522-4 ↗