Cu/Sb Codoping for Tuning Carrier Concentration and Thermoelectric Performance of GeTe-Based Alloys with Ultralow Lattice Thermal Conductivity
Source abstract
Abstract
Pristine GeTe shows promising thermoelectric performance but is limited by the high carrier concentration (nH) from Ge vacancies and thermal conductivity. Herein, Cu/Sb was chosen as codopants to suppress the high nH and to decrease thermal conductivity. In this condition, a promising zT of ∼1.62 under 773 K was acquired in the Ge0.85Te(CuSb)0.075 system proposed in this paper/work. Results show that as the dopant concentration increases, the power factor rises due to the reduction of the nH to ∼1 × 1020 cm–3. Apart from this, the total thermal conductivity also declines from ∼7.4 W m–1 K–1 to ∼1.59 W m–1 K–1 originating from an ultralow lattice thermal conductivity, in which the multiscatter mechanism from grain boundaries and point defect disperses the frequency phonons differently. The findings in this paper combine thermal and electronic strategies and lay the foundation to develop Pb-free thermoelectric materials.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advanced Thermoelectric Materials and Devices · Chalcogenide Semiconductor Thin Films · Thermal properties of materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
State Key Laboratory of Heavy Oil Processing, College of Science, China University of Petroleum, Beijing 102249, PR China
School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, PR China
Materials Engineering, The University of Queensland, Brisbane, Queensland 4072, Australia
Department of Mechanical Engineering, State Key Laboratory of Tribology, Tsinghua University, Beijing 100084, PR China
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, PR China
Funding
the Natural Science Foundation of China · the National Postdoctoral Program for Innovative Talents
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