journal article·2022-06-27Open access

Temperature Induced Band Convergence, Intervalley Scattering, and Thermoelectric Transport in p-Type PbTe

Ransell D’Souza, José D. Querales-Flores, Jiang Cao, Stephen Fahy, Ivana Savić

ACS Applied Energy Materials· Volume 5· Issue 6

Abstract

Achieving high valley degeneracy (i.e., “band convergence”) in a material usually results in considerably enhanced thermoelectric properties. However, it is still unclear why this strategy of designing efficient thermoelectric materials is so successful, because the benefit of increased density of states may be severely degraded by intervalley scattering. Using first-principles calculations, we investigate these effects in p-type PbTe, where temperature induces alignment of the L and Σ valleys at ∼620 K. We explicitly show that the thermoelectric power factor and figure of merit peak near the band convergence temperature. The figure of merit maximum is larger than those of the individual L and Σ valleys. Surprisingly, intervalley scattering does not considerably affect the figure of merit near the band convergence temperature and optimal doping conditions, although it reduces the power factor by almost a factor of 2. Our results suggest that band convergence will significantly increase the figure of merit if intervalley scattering is roughly proportional to the density of states and the lattice thermal conductivity is considerably lower than the electronic thermal conductivity, even if intervalley scattering is strong.
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Research context

OpenAlex topics: Advanced Thermoelectric Materials and Devices · Chalcogenide Semiconductor Thin Films · Advanced Semiconductor Detectors and Materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Tyndall National Institute, Lee Maltings, Dyke Parade, Cork T12 R5CP, Ireland

Institut für Integrierte Systeme, ETH Zürich, Rämistrasse, 101, 8092 Zürich, Switzerland

School of Electronic and Optical Engineering, Nanjing University of Science and Technology, Nanjing 210094, China

Department of Physics, University College Cork, College Road, Cork T12 K8AF, Ireland

Funding

Science Foundation Ireland · European Regional Development Fund · Marie Sklodowska-Curie Actions

References (64)

Show source-provided references
1. Lifshitz I. M. · Zh. Eksp. Teor. Fiz. · 1960 · 38 · 1569
2. Lifshitz I. M. · Sov. Phys. JETP · 1960 · 11 · 1130
3. 10.1063/1.497418510.1063/1.4974185 ↗
4. 10.1103/PhysRevLett.122.22660110.1103/PhysRevLett.122.226601 ↗
5. 10.1038/nature0999610.1038/nature09996 ↗
6. 10.1002/adma.20120291910.1002/adma.201202919 ↗
7. 10.1103/PhysRevLett.108.16660110.1103/PhysRevLett.108.166601 ↗
8. 10.1039/c3ee42187b10.1039/c3ee42187b ↗
9. 10.1039/C3EE43438A10.1039/C3EE43438A ↗
10. 10.1021/ja500860m10.1021/ja500860m ↗
11. 10.1021/jacs.5b0083710.1021/jacs.5b00837 ↗
12. 10.1039/C4EE01463D10.1039/C4EE01463D ↗
13. 10.1038/nmat443010.1038/nmat4430 ↗
14. 10.1021/cm504112m10.1021/cm504112m ↗
15. 10.1016/j.jmat.2015.09.00110.1016/j.jmat.2015.09.001 ↗
16. 10.1021/jacs.5b0728410.1021/jacs.5b07284 ↗
17. 10.1039/C6EE02674E10.1039/C6EE02674E ↗
18. 10.1016/j.mattod.2017.02.00710.1016/j.mattod.2017.02.007 ↗
19. 10.1021/jacs.7b1361110.1021/jacs.7b13611 ↗
20. 10.1073/pnas.180202011510.1073/pnas.1802020115 ↗
21. 10.1038/nmat209010.1038/nmat2090 ↗
22. 10.1103/PhysRevB.94.16120110.1103/PhysRevB.94.161201 ↗
23. 10.1103/PhysRevB.99.19520210.1103/PhysRevB.99.195202 ↗
24. 10.1063/1.511734510.1063/1.5117345 ↗
25. 10.1038/s41467-021-23839-w10.1038/s41467-021-23839-w ↗
26. 10.1021/acsaem.0c0082510.1021/acsaem.0c00825 ↗
27. 10.1038/s41524-021-00512-w10.1038/s41524-021-00512-w ↗
28. 10.1016/j.mtphys.2021.10059210.1016/j.mtphys.2021.100592 ↗
29. 10.1103/PhysRevApplied.11.02401710.1103/PhysRevApplied.11.024017 ↗
30. 10.1103/PhysRevLett.110.14660110.1103/PhysRevLett.110.146601 ↗
31. 10.1103/PhysRevMaterials.3.05540510.1103/PhysRevMaterials.3.055405 ↗
32. 10.1021/acs.chemmater.0c0374010.1021/acs.chemmater.0c03740 ↗
33. 10.1103/PhysRevB.90.12541410.1103/PhysRevB.90.125414 ↗
34. 10.1209/0295-5075/109/5700610.1209/0295-5075/109/57006 ↗
35. 10.1103/PhysRevB.92.07540510.1103/PhysRevB.92.075405 ↗
36. 10.1103/PhysRevB.94.08520410.1103/PhysRevB.94.085204 ↗
37. 10.1103/PhysRevB.94.20120110.1103/PhysRevB.94.201201 ↗
38. 10.1103/PhysRevB.93.03541410.1103/PhysRevB.93.035414 ↗
39. 10.1103/PhysRevB.95.07520610.1103/PhysRevB.95.075206 ↗
40. 10.1103/PhysRevB.97.12120110.1103/PhysRevB.97.121201 ↗
41. 10.1103/PhysRevB.102.09430810.1103/PhysRevB.102.094308 ↗
42. 10.1103/PhysRevResearch.3.04302210.1103/PhysRevResearch.3.043022 ↗
43. 10.1016/j.cpc.2021.10797010.1016/j.cpc.2021.107970 ↗
44. 10.1103/PhysRevB.102.11520410.1103/PhysRevB.102.115204 ↗
45. 10.1016/0022-3697(57)90013-610.1016/0022-3697(57)90013-6 ↗
46. 10.1088/0022-3719/9/12/01310.1088/0022-3719/9/12/013 ↗
47. 10.1103/PhysRevB.23.149510.1103/PhysRevB.23.1495 ↗
48. 10.1103/PhysRevB.27.476010.1103/PhysRevB.27.4760 ↗
49. 10.1103/PhysRevB.55.1035510.1103/PhysRevB.55.10355 ↗
50. 10.1103/RevModPhys.73.51510.1103/RevModPhys.73.515 ↗
51. Madelung · 1987 · 17
52. Yu, P. Y.; Cardona, M. Fundamentals of Semiconductors: Physics and Materials Properties, 3rd ed. Springer: Berlin, 2005; p 121.10.1007/b137661 ↗
53. Ridley, B. K. Quantum Processes in Semiconductors, 4th ed. Oxford University Press: Oxford, UK, 1999; pp 82–137.
54. 10.1103/PhysRevB.98.20520210.1103/PhysRevB.98.205202 ↗
55. 10.1016/j.mtphys.2019.10017210.1016/j.mtphys.2019.100172 ↗
56. 10.1103/PhysRevB.93.10430410.1103/PhysRevB.93.104304 ↗
57. 10.1039/c0ee00456a10.1039/c0ee00456a ↗
58. 10.1103/PhysRevB.77.23520210.1103/PhysRevB.77.235202 ↗
59. 10.1021/ja206380h10.1021/ja206380h ↗
60. 10.1021/jacs.0c0706710.1021/jacs.0c07067 ↗
61. Chernik I. A. · Sov. Phys. Semiconduct. · 1968 · 2 · 645
62. 10.1002/aenm.20140048610.1002/aenm.201400486 ↗
63. 10.1038/s41560-018-0093-410.1038/s41560-018-0093-4 ↗
64. 10.1002/aelm.20180090410.1002/aelm.201800904 ↗