DataVXACS Applied Energy MaterialsPaper
journal article·2020-11-23Open access

High-Quality SnSe2 Single Crystals: Electronic and Thermoelectric Properties

Anh-Tuan Pham, Thi Hoa Vu, Chang Cheng, Thi Ly Trinh, Ji-Eun Lee, Hyejin Ryu, Choongyu Hwang, Sung-Kwan Mo, Jungdae Kim, Li-dong Zhao, Anh-Tuan Duong, Sunglae Cho

ACS Applied Energy Materials· Volume 3· Issue 11
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Source abstract

Abstract

High-quality SnSe2 single crystals were successfully synthesized using a temperature gradient method. N-type characteristics and strong anisotropic transport properties of SnSe2 single crystals were exhibited between the ab plane and the c-axis. At 673 K, the power factor (PF) value along the ab plane is 3.43 μW cm–1 K–2, while it is 0.92 μW cm–1 K–2 along the c-axis. The ratio between thermal conductivities along the ab plane (κab) and c-axis (κc) is on the order of 7.6 at 300 K, while this value is about 5.6 at 673 K. The thermoelectric figure of merit (ZT) in the c-axis (0.15) is higher than that (0.1) along the ab plane, according to the ultralow out-of-plane thermal conductivity. The electronic band structure results, which were examined by angle-resolved photoemission spectroscopy (ARPES) predicted the potential of improving the thermoelectric performance of SnSe2 single crystals by electron doping.
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Research context

OpenAlex topics: Advanced Thermoelectric Materials and Devices · Chalcogenide Semiconductor Thin Films · 2D Materials and Applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Physics and Energy Harvest-Storage Research Center, University of Ulsan, Ulsan 44610, Republic of Korea

School of Materials Science and Engineering, Beihang University, Beijing 100191, China

Center for Spintronics, Korea Institute of Science and Technology (KIST), Seoul 02792, Republic of Korea

Department of Physics, Pusan National University, Busan 46241, Republic of Korea

Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States

Phenikaa Research and Technology Institute (PRATI) and Faculty of Materials Science and Engineering, Phenikaa University, Hanoi 12116, Vietnam

Funding

National Research Foundation of Korea · U.S. Department of Energy · National Foundation for Science and Technology Development · Ministry of Science and ICT

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