Scalable and Sustainable N-Si-Ge-Te Ovonic Threshold Switching Devices for Energy-Efficient Artificial Neuron Applications
Source abstract
Abstract
Abstract Neuromorphic computing, inspired by biological nervous systems, yields high energy efficiency and data throughput by integrating computation and storage within memory crossbar arrays. A key requirement for neuromorphic hardware is an artificial neuron capable of low-power, high-frequency operation. Ovonic threshold switch (OTS) devices have attracted attention due to their scalability and intrinsic capacitance, enabling simple circuitry to demonstrate leaky integrate-and-fire (LIF) behavior. This study proposes a sustainable and scalable OTS device based on a quaternary N-Si-Ge-Te (NSGT) chalcogenide system and provides insights into the roles of individual elements in bond formation, resulting in ultralow off-current density (Joff = 2.3 × 10–8 MA/cm2). Finally, our optimized NSGT OTS device demonstrates low-power spiking operation, achieving 0.56 pJ/μm2 per spike. These findings establish stoichiometric guidelines for designing high-performance Te-based OTS devices for energy-efficient neuromorphic computing.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Advanced Memory and Neural Computing · Thin-Film Transistor Technologies · Phase-change materials and chalcogenides
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Yonsei University , , ,
Funding
Samsung · National Research Foundation of Korea
References (70)
Show source-provided references
1. Neuromorphic artificial intelligence systems10.3389/fnins.2022.959626 ↗
2. Emerging memory devices for neuromorphic computing10.1002/admt.201800589 ↗
3. Hardware implementation of memristor-based artificial neural networks10.1038/s41467-024-45670-9 ↗
4. A Review of Artificial Spiking Neuron Devices for Neural Processing and Sensing10.1002/adfm.202204102 ↗
5. Synaptic and neural behaviours in a standard silicon transistor10.1038/s41586-025-08742-4 ↗
6. Experimental demonstration of highly reliable dynamic memristor for artificial neuron and neuromorphic computing10.1038/s41467-022-30539-6 ↗
7. An introduction to ovonic research10.1016/0022-3093(70)90125-0 ↗
8. Ultrahigh drive current and large selectivity in GeS selector10.1038/s41467-020-18382-z ↗
9. Low-Voltage and High Thermal Stability Single-Element Te Selector with Failed Bit Pruning Operation Enabling Robust Cross-Point Memory10.1002/aelm.202200870 ↗
10. Engineering spiking neurons using threshold switching devices for high-efficient neuromorphic computing10.3389/fnins.2021.786694 ↗
11. Forming-free NbO x-based memristor enabling low-energy-consumption artificial spiking afferent nerves10.1109/TED.2022.3191988 ↗
12. Nanoscopic Observation of Structural Changes After First-Firing Behavior in W/GeTe/W Ovonic Threshold Switches Using AFM Tip–Based Local Biasing10.1002/smtd.70793 ↗
13. Te-based binary OTS selectors with excellent selectivity (105) endurance (108) and thermal stability (450C)10.1109/VLSIT.2018.8510681 ↗
14. Advanced atomic force microscopy-based techniques for nanoscale characterization of switching devices for emerging neuromorphic applications10.1186/s42649-021-00056-9 ↗
15. Effect of Ge Concentration in GexSe1-x Chalcogenide Glass on the Electronic Structures and the Characteristics of Ovonic Threshold Switching (OTS) Devices10.1149/2.001310ssl ↗
16. Te-based chalcogenide materials for selector applications10.1038/s41598-017-08251-z ↗
17. Zn1–xTex ovonic threshold switching device performance and its correlation to material parameters10.1038/s41598-018-30207-0 ↗
18. Verdy, A.; Navarro, G.; Bernard, M.; Noe, P.; Bourgeois, G.; Garrione, J.; Cyrille, M.-C.; Sousa, V.; Nowak, E. High temperature stability and performance analysis of N-doped Ge-Se-Sb based OTS selector devices. In 2018 IEEE International Memory Workshop (IMW); IEEE: 2018; pp 1–4.10.1109/IMW.2018.838883410.1109/IMW.2018.8388834 ↗
19. An Ultra High Endurance and Thermally Stable Selector based on TeAsGeSiSe Chalcogenides Compatible with BEOL IC Integration for Cross-Point PCM10.1109/IEDM.2017.8268310 ↗
20. Ge Content Optimization in Ge(SbSe)N OTS Materials for Selector Applications10.1109/ted.2022.3203368 ↗
21. Effect of Nitrogen on the Amorphous Structure and Subthreshold Electrical Conduction of GeSeSb-Based Ovonic Threshold Switching Thin Films10.1002/pssr.201900548 ↗
22. How arsenic makes amorphous GeSe a robust chalcogenide glass for advanced memory integration10.1016/j.scriptamat.2022.114834 ↗
23. A plasma-treated chalcogenide switch device for stackable scalable 3D nanoscale memory10.1038/ncomms3629 ↗
24. Simple binary ovonic threshold switching material SiTe and its excellent selector performance for high-density memory array application10.1109/LED.2017.2685435 ↗
25. 3D stackable and scalable binary ovonic threshold switch devices with excellent thermal stability and low leakage current for high-density cross-point memory applications10.1002/aelm.201900196 ↗
26. Govoreanu, B.; Donadio, G. L.; Opsomer, K.; Devulder, W.; Afanas' Ev, V.; Witters, T.; Clima, S.; Avasarala, N. S.; Redolfi, A.; Kundu, S. Thermally stable integrated Se-based OTS selectors with >20 MA/cm 2 current drive, >3.10 3 half-bias nonlinearity, tunable threshold voltage and excellent endurance. In 2017 Symposium on VLSI Technology; IEEE: 2017; pp T92–T93.10.23919/VLSIT.2017.7998207 ↗
27. Extended endurance performance and reduced threshold voltage by doping Si in GeSe-based ovonic threshold switching selectors10.1016/j.tsf.2021.138837 ↗
28. Ultra-high endurance and low I OFF selector based on AsSeGe chalcogenides for wide memory window 3D stackable crosspoint memory10.1109/IEDM.2018.8614580 ↗
29. Half-threshold bias I off reduction down to nA range of thermally and electrically stable high-performance integrated OTS selector, obtained by Se enrichment and N-doping of thin GeSe layers10.1109/VLSIT.2018.8510680 ↗
30. Performance improvement of GeTe x-based ovonic threshold switching selector by C doping10.1109/LED.2021.3064857 ↗
31. The enhanced performance of a Si–As–Se ovonic threshold switching selector10.1039/d1tc02730a ↗
32. Simple artificial neuron using an ovonic threshold switch featuring spike-frequency adaptation and chaotic activity10.1103/PhysRevApplied.13.064056 ↗
33. Various threshold switching devices for integrate and fire neuron applications10.1002/aelm.201800866 ↗
34. Leaky integrate-and-fire and oscillation neurons based on ZnO diffusive memristors for spiking neural networks10.1007/s40843-024-3236-6 ↗
35. Spiking neural network integrated with impact ionization field-effect transistor neuron and a ferroelectric field-effect transistor synapse10.1002/adma.202406970 ↗
36. Mimicry of excitatory and inhibitory artificial neuron with leaky integrate-and-fire function by a single MOSFET10.1109/LED.2019.2958623 ↗
37. Cointegration of single-transistor neurons and synapses by nanoscale CMOS fabrication for highly scalable neuromorphic hardware10.1126/sciadv.abg8836 ↗
38. Leaky integrate and fire neuron by charge-discharge dynamics in floating-body MOSFET10.1038/s41598-017-07418-y ↗
39. Stochastic phase-change neurons10.1038/NNANO.2016.70 ↗
40. Analytical model for subthreshold conduction and threshold switching in chalcogenide-based memory devices10.1063/1.2773688 ↗
41. GeSe ovonic threshold switch: the impact of functional layer thickness and device size10.1038/s41598-024-57029-7 ↗
42. An excellent performance of a C-Te OTS device with amorphous Ge interfacial layer for selector application10.1063/1.5087273 ↗
43. Chai, Z.; Zhang, W.; Degraeve, R.; Clima, S.; Hatem, F.; Zhang, J.; Freitas, P.; Marsland, J.; Fantini, A.; Garbin, D. Evidence of filamentary switching and relaxation mechanisms in Ge x Se 1-x OTS selectors. In 2019 Symposium on VLSI Technology; IEEE: 2019; pp T238–T239.10.23919/VLSIT.2019.8776566 ↗
44. Modelling glass transition temperatures of chalcogenide glasses. Applied to phase-change optical recording materials10.1016/S0022-3093(01)01034-1 ↗
45. Pauling · 1960
46. Effect of nitrogen doping on characteristics of SiTe Ovonic threshold switch for selectors10.1016/j.mssp.2024.108470 ↗
47. Origins of midgap states in Te-based Ovonic threshold switch materials10.1016/j.actamat.2023.119209 ↗
48. XPS study of Ge-Se-Te surfaces functionalized with organosilanes10.1016/j.apsusc.2022.154921 ↗
49. Structure and optical properties of GeTe film controlled by amorphous to crystalline phase transition10.1016/j.vacuum.2021.110847 ↗
50. Switching, optical, Raman, and Morphological investigations on Sn doped SiTe glasses and thin films10.1016/j.tsf.2022.139472 ↗
51. Thermodynamic, Raman and electrical switching studies on Si15Te85-xAgx (4 ≤ x ≤ 20) glasses10.1063/1.3682759 ↗
52. Volatile to Non-Volatile Switching Transition in Chalcogenides10.1002/adfm.202423940 ↗
53. Kumar, R. A.; Mousa, H. A.; Lekha, P. C.; Mahmoud, S. T.; Qamhieh, N. Scrutiny of structural disorder using Raman spectra and Tauc parameter in GeTe2 thin films. In Journal of Physics: Conference Series; IOP Publishing: 2017; Vol. 869, No. 012018.10.1088/1742-6596/869/1/01201810.1088/1742-6596/869/1/012018 ↗
54. Raman scattering study of the a-GeTe structure and possible mechanism for theamorphous to crystal transition10.1088/0953-8984/18/3/014 ↗
55. Local instability of p-type bonding makes amorphous GeTe a lone-pair semiconductor10.1103/PhysRevB.87.155204 ↗
56. Understanding phase-change memory alloys from a chemical perspective10.1038/srep13698 ↗
57. Ge metal-insulator-semiconductor structures with Ge3N4 dielectrics by direct nitridation of Ge substrates10.1063/1.1805194 ↗
58. Chemical bonding and composition of silicon nitride films prepared by inductively coupled plasma chemical vapor deposition10.1016/j.surfcoat.2010.02.071 ↗
59. Valence-alternation model for localized gap states in lone-pair semiconductors10.1103/PhysRevLett.37.1504 ↗
60. Nitrogen: A promising doping strategy for high-performance ovonic threshold switching selectors10.1016/j.jallcom.2024.176011 ↗
61. Bonding bands, lone-pair bands, and impurity states in chalcogenide semiconductors10.1103/PhysRevLett.28.355 ↗
62. Structural and optical properties of amorphous Si–Ge–Te thin films prepared by combinatorial sputtering10.1038/s41598-021-91138-x ↗
63. Hypervalency in amorphous chalcogenides10.1038/s41467-022-29054-5 ↗
64. Defect engineering of BTe ovonic threshold switch (OTS) with nitrogen doping for improved electrical and reliability performance10.1109/LED.2023.3297992 ↗
65. Inherent electron and hole trapping in amorphous phase-change memory materials: Ge 2 Sb 2 Te 510.1039/D2TC00486K ↗
66. Revealing the intrinsic nature of the mid-gap defects in amorphous Ge2Sb2Te510.1038/s41467-019-10980-w ↗
67. Chalcogenide ovonic threshold switching selector10.1007/s40820-023-01289-x ↗
68. Binary B–Te Selectors Reinvented: Confined Conductive Paths Unlock Superior Ovonic Threshold Switching10.1021/acsami.5c09870 ↗
69. Materials Square.
70. Fast parallel algorithms for short-range molecular dynamics10.1006/jcph.1995.1039 ↗