Source abstract
Abstract
Carbon nanotube (CNT) films are widely considered as prospective building blocks for advanced electronic and nanostructured materials. In particular, electrical transport in high-density CNT films results from a complex interplay between network morphology and CNT connectivity, which remains challenging to characterize quantitatively. To identify the structural parameters that govern the electrical current in CNT films, we employed coarse-grained molecular dynamics to construct dense mesoscale CNT film models that include CNTs with different chiralities and lengths. The effects of CNT geometrical features on the film morphologies were quantified by devising a set of structural descriptors and analyzing their mutual correlations. The impact of varying the concentration of amorphous carbon (aC) inclusions on the film structure was assessed. Finally, we employed a nodal analysis framework to compute the electrical current across the networks and correlate the charge transport characteristics to the underlying structural descriptors. The current is found to be enhanced in films that exhibit high curvature and buckling, low bundling, and strong connectivity. We discuss how the presence of aC inclusions modifies these morphological and current characteristics. This work provides a mesoscale modeling framework for modeling structure–transport relationships in dense CNT films and highlights the role of morphological descriptors in guiding the interpretation of electrical transport in complex nanostructured networks.
Source: openalex_inverted_index · Quality: baseline
Affiliations
Institut des Molécules et Matériaux du Mans
UMR CNRS 6283, Le Mans université
Nanolayers Research Computing Ltd., 51 New Way Road, London NW9 6PL, England
Department of Physics and Astronomy, University College London, Gower Street, London WC1E 6BT, United Kingdom
Department of Applied Physics
Aalto University
Institute for Microelectronics
Technische Universität Wien
Nantero Inc., 25-B Olympia Avenue, Woburn, Massachusetts 01801, United States
M2D Solutions, 4620 Trail West Dr., Austin, Texas 78735, United States
London Centre for Nanotechnology, University College London, Gower Street, London WC1E 6BT, United Kingdom
WPI-Advanced Institute for Materials Research (WPI-AIMR), Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
Department of Physics
NTNU