journal article·2026-05-12

Defect-Controlled Photoresponse in GaOOH/Reduced Graphene Oxide Composites for Ultraviolet-C Photodetectors

Nguyen Khanh, Huy-Binh Do, Tuan-Huu Nguyen, Thuy-Hong-Lam Ngo, Anh-Vu Phan-Gia, Thi Thanh Van Tran, Maria Merlyne De Souza, Hoang-Minh Le, Le Linh, Muhammad H. Nawaz, Feng-Chuan Chuang, Phuong V. Pham, Nam Nguyen Dang

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Abstract

GaOOH/reduced graphene oxide (rGO) composites are investigated for UVC photodetection with a defect-controlled photoresponse. The morphology and crystallinity of GaOOH grown on rGO are strongly influenced by the Ga(NO 3 ) 3 concentration. Excess precursor induces GaOOH aggregation, reducing the effective GaOOH/rGO interfacial area and generating trap states in GaOOH. These traps act as recombination centers that shorten the carrier lifetime and suppress the photocurrent. The optimized 10% Ga(NO 3 ) 3 device shows the best performance, achieving a responsivity of 63.82 mA/W and an external quantum efficiency of 31%, about four times higher than the 30% sample and ∼220 times higher than previously reported GaOOH-based photodetectors.
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Research context

OpenAlex topics: Ga2O3 and related materials · GaN-based semiconductor devices and materials · Photocathodes and Microchannel Plates

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Faculty of Materials Science and Technology, University of Science

Vietnam National University

Ho Chi Minh City University of Technology and Engineering

EEE Department

University of Sheffield

Department of Physics

National Sun Yat-sen University

National Tsing Hua University

Physics Division

National Center for Theoretical Sciences

Center for Quantum Computing and Quantum Materials

Future Materials & Devices Laboratory, Institute of Fundamental and Applied Sciences

Duy Tan University

Faculty of Civil Engineering

Funding

B? Gi?o d?c v? ??o t?o

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