Highly Reliable and Magnetic-Field-Immune Physically Unclonable Functions Using One-Time Programming in SOT-MRAM Arrays
Source abstract
Abstract
Spin–orbit torque magnetic random-access memory (SOT-MRAM) is a promising nonvolatile memory technology, offering low power consumption and high-speed read/write performance. The inherent fabrication variations within SOT units generate static entropy, making them suitable as carriers of physically unclonable functions (PUFs). Integrating PUFs with SOT-MRAM chips enhances hardware security and improves the fabrication feasibility, area efficiency, and cost-effectiveness. In this work, we present a highly reliable SOT-MRAM-based PUF design, where the introduction of one-time programmable significantly enhances PUF reliability, such as a 44× improvement in read margin, an optimal inter/intra-Hamming distance ratio, and zero bit error rate. Furthermore, the proposed OTP-PUF exhibits exceptional resilience to external magnetic fields (up to 500 Oe) and stable readout across an extended temperature range (−55 °C–150 °C), guaranteeing reliability in harsh environments. The results demonstrate that SOT-MRAM-based OTP-PUF presents a promising solution for secure memory systems.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Physical Unclonable Functions (PUFs) and Hardware Security · Integrated Circuits and Semiconductor Failure Analysis · Security and Verification in Computing
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
School of Integrated Circuit Science and Engineering
Beihang University
Beijing Microelectronics Technology Institute
Funding
National Key Research and Development Program of China · National Natural Science Foundation of China
References (40)
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