High-Brightness Micro-LED Achieved by Controlled n-GaN Thinning via RIE

This work demonstrates a reactive ion etching (RIE)-assisted interface engineering approach to overcome efficiency limitations in GaN-based micro-LEDs. By progressively thinning the n-GaN layer from its initial 6 μm thickness to 200 nm, we achieve substantial improvements in device performance. The optimal configuration with 389 nm n-GaN thickness delivers a peak luminance of 43,807 cd/m 2 at 12 V bias─representing a 12-fold enhancement compared to untreated devices. Combined optical simulation and electrical characterization confirm that this specific thickness provides the best compromise between the optical extraction efficiency and electrical characteristics. This study validates interface engineering through controlled thinning as an effective strategy for developing high-brightness micro-LEDs suitable for augmented and virtual reality displays.