DataVXACS Applied Electronic MaterialsPaper
journal article·2026-01-27Open access

Correction to “Structural Properties of Hf 0.5 Zr 0.5 O 2 Integrated on Silicon”

Kit de Hond, Mart Salverda, Majid Ahmadi, Evert Houwman, Beatriz Noheda, Bart J. Kooi, Guus Rijnders, Gertjan Koster

ACS Applied Electronic Materials· Volume 8· Issue 2
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Source abstract

Abstract

[This corrects the article DOI: 10.1021/acsaelm.5c00753.].
Only a short abstract or summary was supplied by the source.
Source: openalex_inverted_index · Quality: short

Research context

OpenAlex topics: Ferroelectric and Negative Capacitance Devices · MXene and MAX Phase Materials · Semiconductor materials and devices

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