Dual-Dielectric Layers Sm₂O₃-Based Photoelectric Memristor for Enhanced Stability

Memristors, with their intrinsic low power consumption, high speed operation, and unified memory-computing architecture, present a compelling alternative to overcome the limitations of traditional von Neumann systems. However, the instability of single-dielectric-layer memristors, primarily due to the unpredictable formation of conductive filaments, remains a significant challenge. This study presents the design and fabrication of an Ag/Sm 2 O 3 (O D )/Sm 2 O 3 (O R )/Pt/Ti photoelectric memristor with a dual-dielectric layer structure to address these stability concerns. The device exhibits extremely low operation voltages ( V SET: 0.13 V, V RESET: −0.73 V), a switch window of up to 10 3, and stable performance across 100 consecutive cycles. Leveraging solar-blind UV writing and electrical erasing, this device performs ″OR″ logic operations with nonvolatile and reconfigurable characteristics, using UV and voltage as input signals and resistance states (RS) as output. The results demonstrate that the conduction mechanism is dominated by the conductive filament mechanism, and the dual-dielectric layer significantly improves the stability of the samarium oxide (Sm 2 O 3 ) memristor. This study provides a potential approach to addressing the stability and longevity challenges in traditional memristors and holds promise for next-generation nonvolatile logic computing devices.