Evidence of Avalanche Multiplication in GeSeAs Ovonic Threshold Switch Selectors
Source abstract
Abstract
The switching characteristics for Ge 10 Se 54 As 36 (GSA) ovonic threshold switch (OTS) selectors as a function of the OTS thickness were examined for various devices. We find that thicker GSA devices (20 and 30 nm) switch at lower effective electric fields compared to the 10 nm GSA device. In addition, the OFF state I – V curves for thicker GSA devices exhibit different functional regimes, indicating the presence of additional transport mechanisms. To explain this thickness dependence, we expand the lucky drift electron model for avalanche multiplication so that it can handle nanoscale thin films. Using this model, we show that avalanche multiplication is enhanced in thicker GSA OTS devices and this can explain the observed thickness dependence. This work provides unambiguous experimental evidence that avalanche breakdown plays a role in OTS switching.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Phase-change materials and chalcogenides · Semiconductor materials and interfaces · Photonic and Optical Devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
San Jose Research Center, Western Digital Corporation, 5601 Great Oaks Parkway, San Jose, California 95119, United States
References (59)
Show source-provided references
1. 10.1103/PhysRevLett.21.145010.1103/PhysRevLett.21.1450 ↗
2. Kolomiets B. · Radiotekh. Elektron. · 1963 · 8 · 2097
3. Northover, W. R.; Pearson, A. D. Glass Composition. US Patent US3117013, 1964.
4. Ovshinsky, S. R. Symmetrical Current Controlling Device. US Patent US3271591, 1966.
5. Dennard, R. H. Field Effect Transistor Memory. US Patent US3387286, 1967.
6. 10.1007/s13391-012-2040-z10.1007/s13391-012-2040-z ↗
7. 10.1109/T-ED.1973.1762610.1109/T-ED.1973.17626 ↗
8. 10.1016/0022-3093(70)90166-310.1016/0022-3093(70)90166-3 ↗
9. Kau, D.; Tang, S.; Karpov, I. V.; Dodge, R.; Klehn, B.; Kalb, J. A.; Strand, J.; Diaz, A.; Leung, N.; Wu, J.; Lee, S.; Langtry, T.; Chang, K.W.; Papagianni, C.; Lee, J.; Hirst, J.; Erra, S.; Flores, E.; Righos, N.; Castro, H.; Spadini, G. A Stackable Cross Point Phase Change Memory, IEEE International Electron Devices Meeting (IEDM), 2009.
10. Cheng, H. Y.; Chien, W. C.; Kuo, I. T.; Yeh, C. W.; Gignac, L.; Kim, W.; Lai, E. K.; Lin, Y. F.; Bruce, R. L.; Lavoie, C.; Cheng, C.; Ray, A.; Lee, F. M.; Carta, F.; Yang, C. H.; Lee, M. H.; Ho, H. Y.; BrightSky, M.; Lung, H. L. Ultra-High Endurance and Low IOFF Selector based on AsSeGe Chalcogenides for Wide Memory Window 3D Stackable Crosspoint Memory, IEEE International Electron Devices Meeting (IEDM), 2018.10.1109/IEDM.2018.8614580 ↗
11. Kim, T.; Choi, H.; Kim, M.; Yi, J.; Kim, D.; Cho, S.; Lee, H.; Hwang, C.; Hwang, E.R.; Song, J.; Chae, S.; Chun, Y.; Kim, J.K. High-Performance, Cost-Effective 2z nm Two-Deck Cross-Point Memory Integrated by Self-Align Scheme for 128 Gb SCM, IEEE International Electron Devices Meeting (IEDM), 2018.10.1109/IEDM.2018.8614680 ↗
12. Verdy, A.; Navarro, G.; Bernard, M.; Noe, P.; Bourgeois, G.; Garrione, J.; Cyrille, M.C.; Sousa, V.; Nowak, E. High Temperature Stability and Performance Analysis of N-doped Ge-Se-Sb Based OTS Selector Devices, IEEE International Memory Workshop (IMW), 2018.10.1109/IMW.2018.8388834 ↗
13. 10.1557/mrs.2019.20610.1557/mrs.2019.206 ↗
14. 10.1007/s40820-023-01289-x10.1007/s40820-023-01289-x ↗
15. 10.1002/aelm.20240066510.1002/aelm.202400665 ↗
16. Pellizzer, F.; Pirovano, A.; Bez, R.; Meyer, R. L. Status and Perspectives of Chalcogenide-based CrossPoint Memories, International Electron Devices Meeting (IEDM), 2023.10.1109/IEDM45741.2023.10413669 ↗
17. 10.1002/advs.20240802810.1002/advs.202408028 ↗
18. 10.1063/1.271502410.1063/1.2715024 ↗
19. 10.1103/PhysRevB.78.05220110.1103/PhysRevB.78.052201 ↗
20. 10.1103/PhysRevB.9.166910.1103/PhysRevB.9.1669 ↗
21. 10.1103/PhysRevB.11.381410.1103/PhysRevB.11.3814 ↗
22. 10.1063/1.32803610.1063/1.328036 ↗
23. 10.1063/1.277368810.1063/1.2773688 ↗
24. 10.1063/1.486165810.1063/1.4861658 ↗
25. 10.1103/PhysRevLett.37.150410.1103/PhysRevLett.37.1504 ↗
26. 10.1103/PhysRevLett.28.81310.1103/PhysRevLett.28.813 ↗
27. 10.1103/PhysRevB.74.03520610.1103/PhysRevB.74.035206 ↗
28. 10.1103/PhysRevB.73.16521110.1103/PhysRevB.73.165211 ↗
29. 10.1038/s41598-018-37717-x10.1038/s41598-018-37717-x ↗
30. 10.1002/pssr.20190067210.1002/pssr.201900672 ↗
31. 10.1002/pssa.221059015110.1002/pssa.2210590151 ↗
32. 10.1002/pssa.221077014510.1002/pssa.2210770145 ↗
33. 10.1063/1.176398610.1063/1.1763986 ↗
34. 10.1088/0953-8984/22/35/35580310.1088/0953-8984/22/35/355803 ↗
35. 10.1007/s10854-007-9215-710.1007/s10854-007-9215-7 ↗
36. 10.1109/JSEN.2019.295031910.1109/JSEN.2019.2950319 ↗
37. 10.1021/acsaelm.3c0015010.1021/acsaelm.3c00150 ↗
38. 10.1109/TED.2003.82324310.1109/TED.2003.823243 ↗
39. 10.1063/1.221562110.1063/1.2215621 ↗
40. 10.1007/s10854-007-9549-110.1007/s10854-007-9549-1 ↗
41. 10.1016/j.jnoncrysol.2019.11970710.1016/j.jnoncrysol.2019.119707 ↗
42. 10.1002/aelm.20230003710.1002/aelm.202300037 ↗
43. 10.1109/LED.2020.296996210.1109/LED.2020.2969962 ↗
44. Cheng, H. Y.; Chien, W. C.; Kuo, I. T.; Yang, C. H.; Chou, Y. C.; Bruce, R. L.; Lai, E. K.; Daudelin, D.; Yeh, C. W.; Gignac, L.; Cheng, C. W.; Grun, A.; Lavoie, C.; Gong, N.; Buzi, L.; Ho, H. Y.; Ray, A.; Utomo, H.; BrightSky, M.; Lung, H. L. Optimizing AsSeGe Chalcogenides by Dopants for Extremely Low IOFF, High Endurance and Low Vth Drift 3D Crosspoint Memory, IEEE International Electron Devices Meeting (IEDM), 2021.10.1109/IEDM19574.2021.9720704 ↗
45. 10.1021/acsaelm.3c0051610.1021/acsaelm.3c00516 ↗
46. 10.1063/1.513407510.1063/1.5134075 ↗
47. Hennen, T.; Bedau, D.; Rupp, J. A. J.; Funck, C.; Menzel, S.; Grobis, M.; Waser, R.; Wouters, D. J. Switching Speed Analysis and Controlled Oscillatory Behavior of a Cr-Doped V2O3 Threshold Switching Device for Memory Selector and Neuromorphic Computing Application, IEEE 11th International Memory Workshop (IMW), 2019.10.1109/IMW.2019.8739556 ↗
48. 10.1021/acsami.1c1013110.1021/acsami.1c10131 ↗
49. 10.1080/1478644160863554610.1080/14786441608635546 ↗
50. 10.1103/PhysRev.54.64710.1103/PhysRev.54.647 ↗
51. 10.1155/2014/57816810.1155/2014/578168 ↗
52. 10.1002/pssc.20030431910.1002/pssc.200304319 ↗
53. 10.1016/0038-1101(61)90054-510.1016/0038-1101(61)90054-5 ↗
54. The MathWorks Inc. MATLAB version: 9.12.0 (R2022a) 2022 https://www.mathworks.com.
55. 10.1364/OE.18.02294410.1364/OE.18.022944 ↗
56. 10.1016/j.optmat.2017.08.04210.1016/j.optmat.2017.08.042 ↗
57. 10.1021/acsenergylett.9b0161910.1021/acsenergylett.9b01619 ↗
58. Verdy, A.; Bernard, M.; Castellani, N.; Noé, P.; Garrione, J.; Bourgeois, G.; Cyrille, M. C.; Navarro, G.; Nowak, E. Tunable Performances in OTS Selectors Thanks to Ge3Se7-As2Te3, IEEE 11th International Memory Workshop (IMW), 2019.
59. 10.1038/s41598-024-57029-710.1038/s41598-024-57029-7 ↗