Theoretical and Experimental Study of Resistive Thin Film for Application in Resistive Wall Amplifiers
Source abstract
Abstract
In this paper, the electrical characteristics of resistive thin films and the amplification properties of resistive wall amplifiers are studied based on large signal theory. To optimize amplification performance and reduce interaction length, different frequency bands and operating voltages require films with different electrical properties and thicknesses and a reasonable distribution of the respective lengths of the resistive walls and slow-wave structures. To obtain ZnO x thin films with the required conductivities and thicknesses, reactive DC magnetron sputtering was employed. By controlling the partial pressure of oxygen and the annealing temperature during the preparation process, it is possible to control the number of oxygen deficiencies in the material and the quality of crystallization, which significantly influence the electrical properties. The experiments provide a parameter reference for the preparation of resistive films for millimeter-wave frequency band resistive wall amplifiers.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: ZnO doping and properties · Semiconductor materials and devices · Electronic and Structural Properties of Oxides
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610000, China
Aerospace Information Research Institute, Chinese Academy of Sciences, Beijing100094, China
Southwest China Research Institute of Electronic Equipment, Chengdu610036, China
Funding
National Postdoctoral Program for Innovative Talents · National Natural Science Foundation of China · National Key Laboratory Foundation of China
References (28)
Show source-provided references
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