Insights on boron impact on structural characteristics in epitaxially grown BGaN
Source abstract
Abstract
It is shown that MOCVD growth allows to obtain BGaN epitaxial layers at growth temperature (Tgr) between 840 and 1090 °C. It is found that morphology of the epitaxial layers and amount of B replacing Ga strongly dependent on growth temperature. The SIMS determined that the total amount of B was constant for all growth temperatures. On the other hand, the X-ray measurements shown that amount of boron incorporated into gallium sites decreased from 2.5 to 0.73%, for Tgr changed from 840 to 1090 °C, respectively. That indicated that increase of growth temperature leads to transfer of B atoms from Ga substitutional sites to the interstitial positions. It was also shown that the c(x) lattice parameter for ternary BGaN alloys is well described by the standard interpolation formula. On the other hand, energy shifts observed in photoluminescence suggest that the layers are under dilatation strain.
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Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Metal and Thin Film Mechanics · Semiconductor materials and devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (46)
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