Influence of graded interfaces on the exciton energy of type-I and type-II Si/Si1-x Gex quantum wires
Source abstract
Abstract
The exciton properties of Si/Si 1-x Ge x cylindrical quantum wires (QWRs) are calculated using the variational method and taking into account the existence of an interface layer between the materials. We consider two possibilities for the conduction band lineup, type-I and type-II. Our numerical results show that an interfacial fluctuation of 15A in a Si 0.85 Ge 0.15 (Si0.70Ge0.30) type-I (type-II) wire of 50A wire radius leads to an exciton energy blue shift of the order of 10 (10) meV.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Nanowire Synthesis and Applications · Semiconductor Quantum Structures and Devices · Semiconductor materials and interfaces
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